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Strained silicon on a SiGe on SOI substrate

  • US 7,468,538 B2
  • Filed: 02/22/2005
  • Issued: 12/23/2008
  • Est. Priority Date: 11/13/2003
  • Status: Active Grant
First Claim
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1. An intermediate semiconductor structure comprising:

  • a substrate;

    a relaxed Si1-xGex layer on the substrate, the relaxed Si1-xGex layer having at least one trench;

    an un-etched Si layer portion on the substrate and beneath the relaxed Si1-xGex layer alone a periphery of the substrate providing structural support for the relaxed Si1-xGex layer along the periphery of the substrate; and

    at least one void between the relaxed Si1-xGex layer and the substrate, wherein the at least one void encompasses an entire surface area of the substrate but for a portion of the substrate in contact with the un-etched Si layer portion.

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