Transmit/receive switch device
First Claim
1. An integrated transmit/receive switch device, comprising:
- a substrate;
an antenna port to couple with an antenna;
a transmitter port to couple with a transmitter;
a receiver port to couple with a receiver;
a receive path between the antenna port and the receiver port;
a transmit path between the antenna port and the transmitter port, the transmit path including a first transistor on the substrate, the first transistor coupled in series between the antenna port and the transmitter port, wherein a body node of the first transistor is unconnected, and wherein the substrate is configured to provide a high impedance path from the first transistor to a reference voltage;
a second transistor on the substrate, the second transistor coupled in series between the receiver port and the reference voltage.
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Accused Products
Abstract
An integrated transmit/receive (T/R) switch device comprises a substrate, an antenna port to couple with an antenna, a transmitter port to couple with a transmitter, and a receiver port to couple with a receiver. A receive path is provided between the antenna port and the receiver port, and a transmit path is provided between the antenna port and the transmitter port. The transmit path includes a first transistor on the substrate, and the first transistor is coupled in series between the antenna port and the transmitter port. A body node of the first transistor is unconnected, and the substrate is configured to provide a high impedance path from the first transistor to a reference voltage. A second transistor on the substrate is coupled in series between the receiver port and the reference voltage.
145 Citations
33 Claims
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1. An integrated transmit/receive switch device, comprising:
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a substrate; an antenna port to couple with an antenna; a transmitter port to couple with a transmitter; a receiver port to couple with a receiver; a receive path between the antenna port and the receiver port; a transmit path between the antenna port and the transmitter port, the transmit path including a first transistor on the substrate, the first transistor coupled in series between the antenna port and the transmitter port, wherein a body node of the first transistor is unconnected, and wherein the substrate is configured to provide a high impedance path from the first transistor to a reference voltage; a second transistor on the substrate, the second transistor coupled in series between the receiver port and the reference voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An integrated transmit/receive switch device, comprising:
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a substrate; an antenna port to couple with an antenna; a transmitter port to couple with a transmitter; a receiver port to couple with a receiver; a receive path between the antenna port and the receiver port; a transmit path between the antenna port and the transmitter port, the transmit path including a first transistor on the substrate, the first transistor coupled in series between the antenna port and the transmitter port; an isolation network coupled between a drain of the first transistor and a source of the first transistor, wherein the isolation network is configured to present a high impedance, at least at a frequency range of operation of the receiver; and a second transistor on the substrate, the second transistor coupled in series between the receiver port and a reference voltage. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. An integrated transmit/receive switch device, comprising:
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a substrate; an antenna port to couple with an antenna; a transmitter port to couple with a transmitter; a receiver port to couple with a receiver; a receive path between the antenna port and the receiver port; a transmit path between the antenna port and the transmitter port, the transmit path including a first transistor on the substrate, the first transistor coupled in series between the antenna port and the transmitter port; a second transistor on the substrate, the second transistor coupled in series between the receiver port and a reference voltage; a diode circuit coupled between a drain of the second transistor and the reference voltage; and a biasing circuit to bias the diode circuit when the second transistor is on. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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31. A communication device, comprising:
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a transmitter having an output; a power amplifier having an input coupled to the output of the transmitter, and having an output; a low noise amplifier having an input and an output; a receiver having an input coupled to the output of the low noise amplifier; an antenna; a transmit/receive switch having a first port coupled to the input of the low noise amplifier, a second port coupled to the output of the power amplifier, and a third port coupled to the antenna, wherein the transmit/receive switch comprises; a substrate; a receive path between the third port and the first port; a transmit path between the third port and the second port, the transmit path including a first transistor on the substrate, the first transistor coupled in series between the third port and the second port, wherein a body node of the first transistor is unconnected, and wherein the substrate is configured to provide a high impedance path from the first transistor to a reference voltage; a second transistor on the substrate, the second transistor coupled in series between the first port and the reference voltage.
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32. A communication device, comprising:
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a transmitter having an output; a power amplifier having an input coupled to the output of the transmitter, and having an output; a low noise amplifier having an input and an output; a receiver having an input coupled to the output of the low noise amplifier; an antenna; a transmit/receive switch having a first port coupled to the input of the low noise amplifier, a second port coupled to the output of the power amplifier, and a third port coupled to the antenna, wherein the transmit/receive switch comprises; a substrate; a receive path between the third port and the first port; a transmit path between the third port and the second port, the transmit path including a first transistor on the substrate, the first transistor coupled in series between the third port and the second port; an isolation network coupled between a drain of the first transistor and a source of the first transistor, wherein the isolation network is configured to present a high impedance, at least at a frequency range of operation of the receiver; and a second transistor on the substrate, the second transistor coupled in series between the first port and a reference voltage.
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33. A communication device, comprising:
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a transmitter having an output; a power amplifier having an input coupled to the output of the transmitter, and having an output; a low noise amplifier having an input and an output; a receiver having an input coupled to the output of the low noise amplifier; an antenna; a transmit/receive switch having a first port coupled to the input of the low noise amplifier, a second port coupled to the output of the power amplifier, and a third port coupled to the antenna, wherein the transmit/receive switch comprises; a substrate; a receive path between the third port and the first port; a transmit path between the third port and the second port, the transmit path including a first transistor on the substrate, the first transistor coupled in series between the third port and the second port; a second transistor on the substrate, the second transistor coupled in series between the receiver port and a reference voltage; a diode circuit coupled between a drain of the second transistor and the reference voltage; and a biasing circuit to bias the diode circuit when the second transistor is on.
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Specification