Apparatus and method for dynamically repairing a semiconductor memory
First Claim
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1. A method of testing memory for faults, comprisingwriting a string of bits to a first collection of memory bits and a second collection of memory bits;
- reading a first string of read bits from the first collection of memory bits;
reading a second string of read bits from the second collection of memory bits; and
comparing each bit in the first string of read bits with a corresponding one in the second string of read bits.
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Abstract
An architecture for dynamically repairing a semiconductor memory, such as a Dynamic Random Access Memory (DRAM), includes circuitry for dynamically storing memory element remapping information. Memory is tested for errors by writing, then reading a plurality of memory blocks, such as rows or columns, in parallel. Memory is dynamically reprogrammed in order to remap unused spare memory elements for failed memory elements when errors are detected. Unused spare memory elements are remapped utilizing a circuit that overrides unblown fuses or antifuses.
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20 Claims
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1. A method of testing memory for faults, comprising
writing a string of bits to a first collection of memory bits and a second collection of memory bits; -
reading a first string of read bits from the first collection of memory bits; reading a second string of read bits from the second collection of memory bits; and comparing each bit in the first string of read bits with a corresponding one in the second string of read bits. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for dynamically testing and repairing a memory, comprising:
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testing a plurality of memory segments to identify a faulty memory segment; identifying an unmapped spare memory segment; and remapping the spare memory segment to replace the faulty memory segment. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification