Cleaning method and solution for cleaning a wafer in a single wafer process

• US 7,469,883 B2
• Filed: 07/31/2006
• Issued: 12/30/2008
• Est. Priority Date: 06/26/2000
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Verhaverbeke, Steven, Truman, Kelly
• Primary Examiner(s): BUSHEY, CHARLES S
• Application Number:
  US11/497,025
• Publication Number:
  US 20060270242A1
• Time in Patent Office: 883 Days
• Field of Search: 261/100, 261/102, 261/104, 261/105, 261/107, 261/DIG.7
• US Class Current: 261/102
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: C11D 1/29 Sulfates of polyoxyalkylene ethers
• CPC Class Codes: C11D 1/72 Ethers of polyoxyalkylene glycols
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/044 Hydroxides or bases
• CPC Class Codes: C11D 3/32 Amides; Substituted amides
• CPC Class Codes: C11D 3/33 Amino carboxylic acids
• CPC Class Codes: C11D 3/3947 Liquid compositions
• CPC Class Codes: C11D 7/06 Hydroxides
• CPC Class Codes: C11D 7/265 Carboxylic acids or salts thereof
• CPC Class Codes: C23G 5/00 Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: Y10S 261/07 Carbonators

Abstract

The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH₄OH), hydrogen peroxide (H₂O₂), water (H₂O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H₂. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

Claims

1. A method of preparing a rinse solution comprising:

using a stacked membrane consisting essentially of a solid membrane on top of a porous membrane;

passing H₂O along said porous membrane; and

passing CO₂ gas along said solid membrane; and

diffusing said CO₂ gas through said solid membrane and dissolving said CO₂ gas into said H₂O.

2. The method of claim 1 wherein said CO₂ gas contains residual byproduct organic impurities from conversion of petroleum to said CO₂ gas, and said diffusing CO₂ gas further comprises diffusing said CO₂ gas minus said organic impurities through said solid membrane.

3. The method of claim 1 further comprising diffusing said CO₂ gas through said solid membrane and dissolving said CO₂ gas into said H₂O until said rinse solution has a resistivity less than 5 megaohm.cm.

4. The method of claim 1 further comprising, passing said H₂O through a multiplicity of conduits formed between a multiplicity of said stacked membranes arranged in parallel.

5. The method of claim 4, wherein said H₂O passes along said porous membranes of said multiplicity of stacked membranes.

6. A method of preparing a rinse solution comprising:

using a first stacked membrane comprising a first solid membrane in contact with a first porous membrane to prepare a rinse solution, wherein said preparation comprises;

passing H₂O along said first porous membrane;

passing CO₂ gas along said first solid membrane; and

diffusing said CO₂ gas through said first solid membrane and dissolving said CO₂ gas into said H₂O until said rinse solution has a resistivity less than 5 megaohm.cm.

7. The method of claim 6 wherein said CO₂ gas contains residual byproduct organic impurities from conversion of petroleum to said CO₂ gas, and said diffusing CO₂ gas further comprises diffusing said CO₂ gas minus said residual byproduct organic impurities through said first solid membrane.

8. The method of claim 6 wherein the first stacked membrane consists essentially of a first solid membrane in contact with a first porous membrane.