Cleaning method and solution for cleaning a wafer in a single wafer process
First Claim
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1. A method of preparing a rinse solution comprising:
- using a stacked membrane consisting essentially of a solid membrane on top of a porous membrane;
passing H2O along said porous membrane; and
passing CO2 gas along said solid membrane; and
diffusing said CO2 gas through said solid membrane and dissolving said CO2 gas into said H2O.
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Abstract
The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.
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Citations
8 Claims
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1. A method of preparing a rinse solution comprising:
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using a stacked membrane consisting essentially of a solid membrane on top of a porous membrane; passing H2O along said porous membrane; and passing CO2 gas along said solid membrane; and diffusing said CO2 gas through said solid membrane and dissolving said CO2 gas into said H2O. - View Dependent Claims (2, 3, 4, 5)
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6. A method of preparing a rinse solution comprising:
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using a first stacked membrane comprising a first solid membrane in contact with a first porous membrane to prepare a rinse solution, wherein said preparation comprises; passing H2O along said first porous membrane; passing CO2 gas along said first solid membrane; and diffusing said CO2 gas through said first solid membrane and dissolving said CO2 gas into said H2O until said rinse solution has a resistivity less than 5 megaohm.cm. - View Dependent Claims (7, 8)
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Specification