Semiconductor light emitting device and fabrication method thereof

• US 7,470,608 B2
• Filed: 02/23/2006
• Issued: 12/30/2008
• Est. Priority Date: 05/15/2002
• Status: Expired due to Term

• Current Assignee: Panasonic Semiconductor Solutions Co., Ltd. (Winbond Electronics Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Ishibashi, Akihiko, Yokogawa, Toshiya, Ohnaka, Kiyoshi, Koike, Susumu
• Primary Examiner(s): Le, Thao P.
• Application Number:
  US11/359,480
• Publication Number:
  US 20060145165A1
• Time in Patent Office: 1,041 Days
• Field of Search: 438/609, 438/20, 438/319, 438/317, 257/79
• US Class Current: 438/609
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/0265 Pendeoepitaxy
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.

Claims

1. A method for fabricating a semiconductor light emitting device comprising the steps of:

forming a plurality of band-like concave portions on top of a first GaN based semiconductor layer with predetermined intervals therebetween;

forming a second GaN based semiconductor layer by epitaxial lateral overgrowth on the projecting portions formed between the concave portions as starting points, and thereby forming an air layer between the bottom surface of the second GaN based semiconductor layer and the concave portion;

forming a layered structure comprising an n-type GaN based semiconductor layer, an active layer, and a p-type GaN based semiconductor layer, on the second GaN based semiconductor layer;

forming an n-type electrode on the n-type GaN based semiconductor layer that is exposed by removing a portion of the layered structure; and

forming a transparent p-type electrode serving as an emission detection surface on the p-type GaN based semiconductor layer.

2. A method for fabricating a semiconductor light emitting device according to claim 1, which further comprises the step of:

forming light-shielding regions where wiring is applied to the p-type electrode and n-type electrode, wherein, among the plurality of concave portions, the width of the concave portions formed beneath the emission detection surface is wider than that of the concave portions formed beneath the light-shielding regions.

3. A method for fabricating a semiconductor light emitting device according to claim 2, wherein wire bonding is applied to the light-shielding regions.

4. A method for fabricating a semiconductor light emitting device according to claim 2, wherein the width of the concave portions formed beneath the emission detection surface is at least twice that of the concave portions formed beneath the light-shielding regions.

5. A method for fabricating a semiconductor light emitting device according to claim 4, wherein the width of the concave portions formed beneath the emission detection surface is not less than 6 μ

m and not more than 20 μ

m.

6. A method for fabricating a semiconductor light emitting device according to claim 4, wherein the width of the concave portions formed beneath the light-shielding regions is not less than 1 μ

m and not more than 6 μ

m.

7. A method for fabricating a semiconductor light emitting device according to claim 4, wherein the width of the projecting portion between the concave portions formed beneath the light-shielding regions is not less than 1 μ

m and not more than 6 μ

m.

8. A method for fabricating a semiconductor light emitting device according to claim 1, wherein the crystal of the second GaN based semiconductor layer is formed on the C-plane of the first GaN based semiconductor layer.

9. A method for fabricating a semiconductor light emitting device according to claim 1, wherein the crystal of the second GaN based semiconductor layer is formed on the A-plane of the first GaN based semiconductor layer.