Semiconductor device and its manufacture method capable of preventing short circuit of electrodes when semiconductor device is mounted on sub-mount substrate

• US 7,470,987 B2
• Filed: 03/01/2007
• Issued: 12/30/2008
• Est. Priority Date: 11/14/2003
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Horio, Naochika, Tsuchiya, Masahiko
• Primary Examiner(s): Doan; Theresa T
• Application Number:
  US11/681,124
• Publication Number:
  US 20070145554A1
• Time in Patent Office: 670 Days
• Field of Search: 257/753, 257773-774, 257763-764, 257768-770, 257/779, 257/781, 257/784, 257/79, 257/99, 257/E23.01
• US Class Current: 257/753
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/0217 Alignment aids
• CPC Class Codes: H01L 2224/02175 Flow barrier
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06102 the bonding areas being at different heights
• CPC Class Codes: H01L 2224/10135 Alignment aids
• CPC Class Codes: H01L 2224/10145 Flow barriers
• CPC Class Codes: H01L 2224/10156 Bump collar
• CPC Class Codes: H01L 2224/10165 Alignment aids
• CPC Class Codes: H01L 2224/10175 Flow barriers
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13021 the bump connector being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/13022 the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/1308 being stacked
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/1403 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/14051 Bump connectors having different shapes
• CPC Class Codes: H01L 2224/16111 the bump connector being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/16237 : the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/16238 : the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81139 : Guiding structures on the body
• CPC Class Codes: H01L 2224/8114 : Guiding structures outside the body
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/9211 : Parallel connecting processes
• CPC Class Codes: H01L 23/291 : Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 23/293 : Organic, e.g. plastic
• CPC Class Codes: H01L 23/3157 : Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12035 : Zener diode
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3841 : Solder bridging
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05K 3/28 : Applying non-metallic protective coatings H05K3/0091 takes precedence; methods for intermediate insulating layers for build-up multilayer circuits H05K3/4673
• CPC Class Codes: H05K 3/4007 : Surface contacts, e.g. bumps H05K3/4092 takes precedence; deposition of finish layers on pads H05K3/24; forming solder bumps H05K3/3457

Abstract

A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

Claims

1. A semiconductor device comprising:

a semiconductor element having first and second electrodes formed on a first surface;

a sub-mount substrate disposed so that a confronting surface of the sub-mount substrate faces the first surface of the semiconductor element, the sub-mount substrate having first and second extension layers disposed at positions facing the first and second electrodes;

first and second pad electrodes respectively formed on the first and second extension layers, the first and second pad electrodes respectively facing the first and second electrodes;

a levee film made of insulating material and disposed on the first surface of the semiconductor element, the levee film having first and second openings formed therethrough at positions corresponding to the first and second electrodes;

a first connection member for electrically connecting the first electrode and the first pad electrode via the first opening and not completely burying an inside of the first opening; and

a second connection member for electrically connecting the second electrode and the second pad electrode via the second opening and not completely burying an inside of the second opening;

wherein the first connection member comprises a bottom portion facing the sub-mount substrate, a surface of the bottom portion of the first connection member is broader than a surface of the first pad electrode facing the semiconductor element, and the levee film is in tight adhesion to a partial area of the surface of the top portion of the first connection member via a first adhesion layer made of material enhancing tight adhesion therebetween.

2. The semiconductor device according to claim 1, wherein the levee film is made of a material selected from a group consisting of silicon oxide, alumina, titanium oxide, zirconia, hafnia and polyimide resin.

3. The semiconductor device according to claim 1, wherein a thickness of the levee film is 500 nm to 3000 nm.

4. The semiconductor device according to claim 1, wherein the first adhesion layer is made of a material selected from a group consisting of titanium, nickel and aluminum.

5. The semiconductor device according to claim 1, wherein the first and second connection members comprise a region made of conductive eutectic material of Au and Sn.