Semiconductor device and driving method thereof

• US 7,471,188 B2
• Filed: 12/03/2004
• Issued: 12/30/2008
• Est. Priority Date: 12/19/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Saito, Toshihiko, Koyama, Jun
• Primary Examiner(s): Bugg; George A
• Assistant Examiner(s): Hunnings; Travis R
• Application Number:
  US11/003,118
• Publication Number:
  US 20050134435A1
• Time in Patent Office: 1,488 Days
• Field of Search: 340/572.1, 340/539.1, 340/572.4, 340/572.7
• US Class Current: 340/10.1
• CPC Class Codes: G06K 19/0701 at least one of the integrated circuit chips comprising an arrangement for power management
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs

Abstract

There has been a problem in battryless RFID chips that a high voltage AC signal is generated when an antenna is exposed to a high electromagnetic field, and a DC voltage that is obtained through rectification of the AC signal becomes a high voltage accordingly. As a result, heat generation of a logic circuit and a clock generator circuit or element break down occur. The invention takes the following measures: a DC voltage generated through rectification of an AC signal is compared with a reference voltage in a comparator circuit, and a switch element is turned ON when the DC voltage becomes higher so as to add capacitance to an antenna circuit. Accordingly, resonance point of an antenna changes which in turn attenuates an AC signal generated in the antenna circuit, thereby suppressing a DC voltage.

Claims

1. A semiconductor device comprising:

an antenna circuit;

a converter circuit which converts an AC voltage to a DC voltage through rectification;

a first comparator circuit;

a second comparator circuit

a first reference voltage source;

a second reference voltage source;

a first switch element electrically connected to the first comparator circuit and the ground;

a second switch element electrically connected to the second comparator circuit and the ground;

a first capacitor electrically connected to the antenna circuit and the first switch element; and

a second capacitor electrically connected to the antenna circuit and the second switch element,

wherein the antenna circuit is electrically connected to the converter circuit,

wherein the first comparator circuit compares an output voltage of the first reference voltage source with an output voltage of the converter circuit, and

wherein the second comparator circuit compares an output voltage of the second reference voltage source with the output voltage of the converter circuit.

2. The semiconductor device according to claim 1, wherein the antenna circuit, the converter circuit, the first comparator circuit, the second comparator circuit, the first capacitor, the second capacitor, the first switch element and the second switch element are integrally formed over the same insulating substrate.

3. The semiconductor device according to claim 2, wherein the insulating substrate is formed of glass, plastic or an insulating film.

4. The semiconductor device according to claim 1, wherein the converter circuit, the first comparator circuit, the second comparator circuit, the first capacitor, the second capacitor, the first switch element and the second switch element are integrally formed over the same insulating substrate, and the antenna circuit is formed on another substrate.

5. The semiconductor device according to claim 4, wherein the insulating substrate is formed of glass, plastic or an insulating film.

6. The semiconductor device according to claim 1, wherein at lest one of the converter circuit, the first comparator circuit, the second comparator circuit, the first switch element and the second switch element is formed of a thin film transistor.

7. The semiconductor device according to claim 1, wherein the antenna circuit is formed over the converter circuit, the first comparator circuit, the second comparator circuit, the first switch element or the second switch element.

8. The semiconductor device according to claim 1, wherein the antenna circuit is formed over a flexible support base, wherein the antenna circuit is surrounded or sandwiched by the flexible support base.

9. An IC card having the semiconductor device according to claim 1.

10. An RFID tag having the semiconductor device according to claim 1.

11. An RFID chip having the semiconductor device according to claim 1.

20. An IC card having the semiconductor device according to claim 2.

12. A semiconductor device comprising:

an antenna circuit;

a converter circuit which converts an AC voltage to a DC voltage through rectification;

a plurality of comparator circuits;

a plurality of reference voltage sources;

a plurality of switch elements each of which is electrically connected to respective one of the plurality of comparator circuits and the ground; and

a plurality of capacitors each of which is electrically connected to the antenna circuit and respective one of the plurality of switch elements,

wherein the antenna circuit is electrically connected to the converter circuit, and

wherein the plurality of comparator circuits compare output voltages of the plurality of reference voltage sources with an output voltage of the converter circuit, respectively.

13. The semiconductor device according to claim 12, wherein the antenna circuit, the converter circuit, the plurality of comparator circuits, the plurality of capacitors and the plurality of switch elements are integrally formed over the same insulating substrate.

14. The semiconductor device according to claim 13, wherein the insulating substrate is formed of glass, plastic or an insulating film.

15. The semiconductor device according to claim 12, wherein the converter circuit, the plurality of comparator circuits, the plurality of capacitors and the plurality of switch elements are integrally formed over the same insulating substrate, and the antenna circuit is formed on another substrate.

16. The semiconductor device according to claim 15, wherein the insulating substrate is formed of glass, plastic or an insulating film.

17. The semiconductor device according to claim 12, wherein at lest one of the converter circuit, the plurality of comparator circuits and the plurality of switch elements is formed of a thin film transistor.

18. The semiconductor device according to claim 12, wherein the antenna circuit is formed over the converter circuit, the plurality of comparator circuits or the plurality of switch elements.

19. The semiconductor device according to claim 12, wherein the antenna circuit is formed over a flexible support base, wherein the antenna circuit is surrounded or sandwiched by the flexible support base.

21. An RFID tag having the semiconductor device according to claim 12.

22. An RFID chip having the semiconductor device according to claim 12.

23. A semiconductor device comprising:

a first antenna circuit;

a second antenna circuit;

a first converter circuit which converts a first AC voltage to a first DC voltage through rectification;

a second converter circuit which converts a second AC voltage to a second DC voltage through rectification;

a comparator circuit;

a switch element electrically connected to the comparator circuit and the ground; and

a capacitor electrically connected to the first antenna circuit and the switch element,

wherein the first and the second antenna circuits are electrically connected to the first and the second converter circuits, respectively, and,

wherein the comparator circuit compares an output voltage of the first converter circuit with an output voltage of the second converter circuit.

24. The semiconductor device according to claim 23, wherein the first and the second antenna circuits, the first and the second converter circuits, the comparator circuit, the capacitor, and the switch element are integrally formed over the same insulating substrate.

25. The semiconductor device according to claim 24, wherein the insulating substrate is formed of glass, plastic or an insulating film.

26. The semiconductor device according to claim 23, wherein the first and the second converter circuits, the comparator circuit, the capacitor and the switch element are integrally formed over the same insulating substrate, and the first and the second antenna circuits are formed on another substrate.

27. The semiconductor device according to claim 26, wherein the insulating substrate is formed of glass, plastic or an insulating film.

28. The semiconductor device according to claim 23, wherein at lest one of the first and the second converter circuits, the comparator circuit and the switch element is formed of a thin film transistor.

29. The semiconductor device according to claim 23, wherein the first and the second antenna circuits are formed over the first converter circuit, the second converter circuit, the comparator circuit or the switch element.

30. The semiconductor device according to claim 23, wherein the first and the second antenna circuits are formed over a flexible support base, wherein the first and the second antenna circuits are surrounded or sandwiched by the flexible support base.

31. An IC card having the semiconductor device according to claim 23.

32. An RFID tag having the semiconductor device according to claim 23.

33. An RFID chip having the semiconductor device according to claim 23.

34. A semiconductor device comprising:

an antenna circuit;

a converter circuit which converts an AC voltage to a DC voltage though rectification;

a first comparator circuit;

a second comparator circuit;

a first reference voltage source;

a second reference voltage source;

a first resistor;

a second resistor;

a first switch element electrically connected to the first comparator circuit and the ground; and

a second switch element electrically connected to the second comparator circuit and the ground; and

a first capacitor electrically connected to the antenna circuit and the first switch element,

a second capacitor electrically connected to the antenna circuit and the second switch element,

wherein the antenna circuit is electrically connected to the converter circuit,

wherein a first terminal of the first resistor is electrically connected to the converter circuit, a second terminal of the first resistor is electrically connected to a first terminal of the second resistor, and a second terminal of the second resistor is electrically connected to the ground,

wherein the first comparator circuit compares an output voltage of the first reference voltage source with a voltage of the second terminal of the first resistor, and

wherein the second comparator circuit compares an output voltage of the second reference voltage source with the voltage of the second terminal of the first resistor.

35. The semiconductor device according to claim 34, wherein the antenna circuit, the converter circuit, the first comparator circuit, the second comparator circuit, the first capacitor, the second capacitor, the first switch element and the second switch element are integrally formed over the same insulating substrate.

36. The semiconductor device according to claim 35, wherein the insulating substrate is formed of glass, plastic or an insulating film.

37. The semiconductor device according to claim 34, wherein the converter circuit, the first comparator circuit, the second comparator circuit, the first capacitor, the second capacitor, the first switch element and the second switch element are integrally formed over the same insulating substrate, and the antenna circuit is formed on another substrate.

38. The semiconductor device according to claim 37, wherein the insulating substrate is formed of glass, plastic or an insulating film.

39. The semiconductor device according to claim 34, wherein at lest one of the converter circuit, the first comparator circuit, the second comparator circuit, the first switch element and the second switch element is formed of a thin film transistor.

40. The semiconductor device according to claim 34, wherein the antenna circuit is formed over the converter circuit, the first comparator circuit, the second comparator circuit, the first switch element or the second switch element.

41. The semiconductor device according to claim 34, wherein the antenna circuit is formed over a flexible support base, wherein the antenna circuit is surrounded or sandwiched by the flexible support base.

42. An IC card having the semiconductor device according to claim 34.

43. An RFID tag having the semiconductor device according to claim 34.

44. An RFID chip having the semiconductor device according to claim 34.

45. A semiconductor device comprising:

an antenna circuit;

a converter circuit which converts an AC voltage to a DC voltage through rectification;

a plurality of comparator circuits;

a plurality of reference voltage sources;

a monitor circuit electrically connected to the converter circuit and the plurality of comparator circuits;

a plurality of switch elements each of which is electrically connected to respective one of the plurality of comparator circuits and the ground; and

a plurality of capacitors each of which is electrically connected to the antenna circuit and respective one of the plurality of switch elements,

wherein the antenna circuit is electrically connected to the converter circuit, and

wherein the plurality of comparator circuits compare output voltages of the plurality of reference voltage sources with an output voltage of the monitor circuit, respectively.

46. The semiconductor device according to claim 45, wherein the antenna circuit, the converter circuit, the plurality of comparator circuits, the plurality of capacitors and the plurality of switch elements are integrally formed over the same insulating substrate.

47. The semiconductor device according to claim 46, wherein the insulating substrate is formed of glass, plastic or an insulating film.

48. The semiconductor device according to claim 45, wherein the converter circuit, the plurality of comparator circuits, the plurality of capacitors and the plurality of switch elements are integrally formed over the same insulating substrate, and the antenna circuit is formed on another substrate.

49. The semiconductor device according to claim 48, wherein the insulating substrate is formed of glass, plastic or an insulating film.

50. The semiconductor device according to claim 45, wherein at lest one of the converter circuit, the plurality of comparator circuits and the plurality of switch elements is formed of a thin film transistor.

51. The semiconductor device according to claim 45, wherein the antenna circuit is formed over the converter circuit, the plurality of comparator circuits or the plurality of switch elements.

52. The semiconductor device according to claim 45, wherein the antenna circuit is formed over a flexible support base, wherein the antenna circuit is surrounded or sandwiched by the flexible support base.

53. An IC card having the semiconductor device according to claim 45.

54. An RFID tag having the semiconductor device according to claim 45.

55. An RFID chip having the semiconductor device according to claim 45.

56. A semiconductor device comprising:

a first antenna circuit;

a second antenna circuit;

a first converter circuit which converts a first AC voltage to a first DC voltage through rectification;

a second converter circuit which converts a second AC voltage to a second DC voltage though rectification;

a comparator circuit;

a first monitor circuit electrically connected to the first converter circuit and the comparator circuit;

a second monitor circuit electrically connected to the second converter circuit and the comparator circuit;

a switch element electrically connected to the comparator circuit and the ground; and

a capacitor electrically connected to the first antenna circuit and the switch element,

wherein the first and the second antenna circuits are electrically connected to the first and the second converter circuits, respectively, and,

wherein the comparator circuit compares an output voltage of the first monitor circuit with an output voltage of the second monitor circuit.

57. The semiconductor device according to claim 56, wherein the first and the second antenna circuits, the first and the second converter circuits, the comparator circuit, the capacitor and the switch element are integrally formed over the same insulating substrate.

58. The semiconductor device according to claim 57, wherein the insulating substrate is formed of glass, plastic or an insulating film.

59. The semiconductor device according to claim 56, wherein the first and the second converter circuits, the comparator circuit, the capacitor and the switch element are integrally formed over the same insulating substrate, and the first and the second antenna circuits are formed on another substrate.

60. The semiconductor device according to claim 59, wherein the insulating substrate is formed of glass, plastic or an insulating film.

61. The semiconductor device according to claim 56, wherein at lest one of the first and the second converter circuits, the comparator circuit and the switch element is formed of a thin film transistor.

62. The semiconductor device according to claim 56, wherein the first and the second antenna circuits are formed over the first converter circuit, the second converter circuit, the comparator circuit or the switch element.

63. The semiconductor device according to claim 56, wherein the first and the second antenna circuits are formed over a flexible support base, wherein the first and the second antenna circuits are surrounded or sandwiched by the flexible support base.

64. An IC card having the semiconductor device according to claim 56.

65. an RFID tag having the semiconductor device according to claim 56.

66. An RFID chip having the semiconductor device according to claim 56.

67. A driving method of a semiconductor device, comprising the steps of:

converting an AC voltage generated in an antenna circuit to a first DC voltage through rectification;

comparing the first DC voltage with a first reference voltage;

comparing the first DC voltage with a second reference voltage;

connecting a first capacitor in parallel to the antenna circuit when the first DC voltage reaches higher than the first reference voltage;

connecting a second capacitor in parallel to the antenna circuit when the first DC voltage reaches higher than the second reference voltage;

attenuating the AC voltage generated in the antenna circuit; and

converting the attenuated AC voltage to a DC voltage through rectification.

68. A driving method of a semiconductor device, comprising the steps of:

converting an AC voltage generated in an antenna circuit to a first DC voltage through rectification;

comparing the first DC voltage with a plurality of reference voltages;

connecting a capacitor being corresponding to one of the plurality of reference voltages in parallel to the antenna circuit when the first DC voltage reaches higher than the one of the plurality of reference voltages;

attenuating the AC voltage generated in the antenna circuit; and

converting the attenuated AC voltage to a second DC voltage through rectification.

69. A driving method of a semiconductor device, comprising the steps of:

converting an AC voltage generated in a first antenna circuit to a first DC voltage through rectification;

converting an AC voltage generated in a second antenna circuit to a second DC voltage through rectification;

comparing the first DC voltage with a the second DC voltage;

connecting a capacitor in parallel to the first antenna circuit when the first DC voltage reaches higher than the second DC voltage;

attenuating the AC voltage generated in the first antenna circuit; and

converting the attenuated AC voltage to a third DC voltage through rectification.