Lithographic apparatus with patterning device position determination

• US 7,471,373 B2
• Filed: 06/25/2004
• Issued: 12/30/2008
• Est. Priority Date: 06/27/2003
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Der Wijst, Marc Wilhelmus Maria, Luttikhuis, Bernardus Antonius Johannes, Franken, Dominicus Jacobus Petrus Adrianus, Van Der Pasch, Engelbertus Antonius Franciscus, Engels, Marc Johannes Martinus, Bartray, Petrus Rutgerus, Box, Wilhelmus Josephus
• Primary Examiner(s): Mathews; Alan A
• Application Number:
  US10/876,786
• Publication Number:
  US 20050024611A1
• Time in Patent Office: 1,649 Days
• Field of Search: 355/53, 355/72, 355/77
• US Class Current: 355/53
• CPC Class Codes: G03F 7/70716 Stages
• CPC Class Codes: G03F 7/70775 Position control, e.g. interferometers or encoders for determining the stage position

Abstract

A lithographic apparatus is disclosed. The apparatus includes a radiation system for supplying a beam of radiation, and a support structure for supporting a patterning device. The patterning device serves to pattern the beam of radiation according to a desired pattern. The apparatus also includes a projection system for projecting the patterned beam of radiation onto a target portion of a substrate, and an assembly for determining a spatial position of the patterning device relative to the projection system. The assembly includes a measuring unit that has a plurality of sensors that are mounted on the projection system.

Claims

1. A lithographic projection apparatus comprising:

a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern;

a projection system configured to project the patterned beam of radiation onto a target portion of a substrate; and

an assembly configured to determine a spatial position of said patterning device relative to said projection system, said assembly comprising a measuring unit having a plurality of sensors mounted on the projection system,

wherein the measuring unit is configured to direct a beam of radiation onto a part of the patterning device outside and adjacent a pattern area of the patterning device.

2. A lithographic projection apparatus according to claim 1, further comprising an EUV radiation source.

3. A lithographic projection apparatus according to claim 1, wherein said measuring unit comprises a 6 degrees of freedom interferometer measurement system.

4. A lithographic projection apparatus according to claim 1, wherein at least one of said sensors is configured to use a laser beam on a reflective part of said patterning device outside a pattern area of said patterning device.

5. A lithographic projection apparatus according to claim 1, configured to irradiate the patterning device along a scanning direction, and to determine the spatial position of said patterning device relative to said projection system by the use of at least three measurement points in a first plane, the first plane being at an angle to the scanning direction, at least two measurement points on a first line being not in the first plane, and at least one point both being not in the first plane and being not on the first line.

6. A lithographic projection apparatus according to claim 5, wherein said measurement points are located on said support structure.

7. A lithographic projection apparatus according to claim 5, wherein at least two measurement points are located on the patterning device outside a pattern area of said patterning device.

8. A lithographic projection apparatus according to claim 4, wherein the reflective part is a reflective strip.

9. A lithographic projection apparatus according to claim 1, wherein the measuring unit is configured to determine a position of the patterning device in a first direction with respect to the projection system, the first direction being substantially perpendicular to the plane of a pattern area of the patterning device when held by the support structure.

10. A lithographic projection apparatus according to claim 1, wherein the part is reflective and the pattern area and the part are on the same side of the patterning device.

11. A lithographic projection apparatus comprising:

a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern;

a projection system configured to project the patterned beam of radiation onto a target portion of a substrate; and

a measuring unit configured to direct a beam of radiation onto a part of the patterning device outside and adjacent a pattern area of the patterning device when held by the support structure and to determine, using the beam, a position of the patterning device in a first direction, the first direction being substantially perpendicular to the plane of a pattern area of the patterning device when held by the support structure.

12. A lithographic projection apparatus according to claim 11, wherein the part is reflective and the pattern area and the part are on the same side of the patterning device.

13. A lithographic projection apparatus according to claim 11, wherein the measuring unit is configured to direct the beam in the first direction.

14. A lithographic projection apparatus according to claim 11, wherein the measuring unit is mounted on the projection system.

15. A lithographic projection apparatus according to claim 11, wherein the measuring unit is configured to direct at least two pairs of beams of radiation to at least two reflective strips on the patterning device.

16. A lithographic projection apparatus comprising:

a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern;

a projection system configured to project the patterned beam of radiation onto a target portion of a substrate; and

a measuring unit on the projection system, the measuring unit configured to direct a beam of radiation onto a part of the patterning device outside and adjacent a pattern area of the patterning device.

17. A lithographic projection apparatus according to claim 16, further comprising an EUV radiation source.

18. A lithographic projection apparatus comprising:

a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern;

a projection system configured to project the patterned beam of radiation onto a target portion of a substrate; and

a measuring unit configured to measure a position of the patterning device when held by the support structure at least once before an exposure using the patterning device, determine the position of the patterning device relative to the support structure using the measurement of the position of the patterning device, and determine, during exposure using the patterning device, a position of the patterning device relative to the projection system from a measurement of the position of the support structure,

wherein the measuring unit is configured to direct a beam of radiation onto a part of the patterning device outside and adjacent a pattern area of the patterning device, the pattern area and the part being on the same side of the patterning device.

19. A lithographic projection apparatus according to claim 18, wherein the measuring unit is configured to direct a beam of radiation onto a part of the patterning device outside a pattern area of the patterning device and determine, using the beam, a position of the patterning device in a first direction, the first direction being substantially perpendicular to the plane of a pattern area of the patterning device when held by the support structure.

20. lithographic projection apparatus according to claim 18, wherein the measuring unit comprises a plurality of sensors mounted on the projection system.

21. A lithographic projection apparatus comprising:

a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern;

a projection system configured to project the patterned beam of radiation onto a target portion of a substrate; and

a measuring unit configured to measure a position of the patterning device when held by the support structure, determine the position of the patterning device relative to the support structure using the measurement of the position of the patterning device, measure a position of the support structure, and determine, during operation of the lithographic apparatus, a position of the patterning device relative to the projection system,

wherein the measuring unit is configured to direct a beam of radiation onto a part of the patterning device outside and adjacent a pattern area of the patterning device.

22. A lithographic projection apparatus according to claim 21, wherein the measuring unit is mounted on the projection system and the measuring unit is configured to determine, using the beam, a position of the patterning device in a first direction, the first direction being substantially perpendicular to the plane of a pattern area of the patterning device when held by the support structure.

23. A lithographic projection apparatus according to claim 22, further comprising an EUV radiation source.