Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
First Claim
Patent Images
1. A method for fabricating a non-volatile memory device comprising a plurality of bitline layers and a plurality of wordline layers sequentially formed on top of each other, the method comprising:
- forming the plurality of bitline layers layer, wherein forming each bitline layer comprises;
forming a semiconductor layer on an insulator, andpatterning and etching the semiconductor layer to form a plurality of bitlines;
forming word line layers in the plurality of wordline layers over respective preceding ones of the plurality of bitline layers, wherein forming each wordline layer comprises;
sequentially forming a trapping structure and a conducting layer, andpatterning and etching the trapping structure and the conducting layer to form a plurality of wordlines; and
forming source/drain regions in regions of the plurality of bitlines not covered by the plurality of wordlines with active regions in the plurality of bit lines beneath the plurality of wordlines.
1 Assignment
0 Petitions
Accused Products
Abstract
A manufacturing method for stacked, non-volatile memory device provides a plurality of bitline layers and wordline layers with charge trapping structures. The bitline layers have a plurality of bitlines formed on an insulating layer, such as silicon on insulator technologies. The wordline layers are patterned with respective pluralities of wordlines and charge trapping structures, orthoganal to the bitlines.
-
Citations
47 Claims
-
1. A method for fabricating a non-volatile memory device comprising a plurality of bitline layers and a plurality of wordline layers sequentially formed on top of each other, the method comprising:
-
forming the plurality of bitline layers layer, wherein forming each bitline layer comprises; forming a semiconductor layer on an insulator, and patterning and etching the semiconductor layer to form a plurality of bitlines; forming word line layers in the plurality of wordline layers over respective preceding ones of the plurality of bitline layers, wherein forming each wordline layer comprises; sequentially forming a trapping structure and a conducting layer, and patterning and etching the trapping structure and the conducting layer to form a plurality of wordlines; and forming source/drain regions in regions of the plurality of bitlines not covered by the plurality of wordlines with active regions in the plurality of bit lines beneath the plurality of wordlines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
-
-
28. A method for fabricating a non-volatile memory device comprising a plurality of bitline layers and a plurality of wordline layers sequentially formed on top of each other, the method comprising:
-
forming the plurality of bitline layers, wherein forming each bitline layer comprises; forming a first semiconductor layer on an insulator, forming a cap layer over the semiconductor layer, etching the cap layer and the first semiconductor layer to form bitline regions comprising remaining portions of the cap layer and the semiconductor layer, forming a dielectric layer over the etched cap and semiconductor layers, etching a portion of the dielectric layer to form dielectric regions between the bitline regions and dielectric regions on top of the remaining portions of the cap layer, and removing the remaining portions of the cap layer and removing the remaining portions of the dielectric layer on top of the cap layer; and forming the plurality of wordline layers over a preceding one of the plurality of bitline layers, wherein forming each wordline layer comprises; sequentially forming a trapping structure and a conducting layer, the trapping structure comprising a multilayer structure, and patterning and etching the trapping structure and the conducting layer to form a plurality of wordlines. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
-
Specification