×

Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together

  • US 7,473,603 B2
  • Filed: 11/12/2007
  • Issued: 01/06/2009
  • Est. Priority Date: 06/19/2006
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a field effect transistor (FET), comprising:

  • forming a trench in a semiconductor region;

    forming a shield dielectric layer lining lower sidewalls and a bottom surface of the trench;

    forming a shield electrode in a lower portion of the trench;

    forming a dielectric layer along upper trench sidewalls and over the shield electrode;

    forming a gate electrode in the trench over the shield electrode; and

    forming an interconnect layer connecting the gate electrode and the shield electrode.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×