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Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups

  • US 7,473,653 B1
  • Filed: 06/18/2007
  • Issued: 01/06/2009
  • Est. Priority Date: 03/31/2003
  • Status: Expired due to Fees
First Claim
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1. A method of preparing a porous low-k dielectric material on a substrate, the method comprising:

  • forming a precursor film on the substrate, the precursor film comprising a porogen and a structure former, wherein the structure former has one or more carbon-carbon double or triple aliphatic bonds; and

    treating the precursor film to facilitate removing the porogen from the precursor film and thereby creating voids within the dielectric material to form the porous low-k dielectric material.

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