Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement

• US 7,473,921 B2
• Filed: 06/07/2006
• Issued: 01/06/2009
• Est. Priority Date: 06/07/2006
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc., Samsung Electronics Co. Ltd.
• Original Assignee: International Business Machines Corporation
• Inventors: Lam, Chung Hon, Schrott, Alejandro Gabriel
• Primary Examiner(s): Baumeister; Bradley W
• Assistant Examiner(s): WARD, ERIC A
• Application Number:
  US11/448,549
• Publication Number:
  US 20070295948A1
• Time in Patent Office: 944 Days
• Field of Search: 257/2, 257/4
• US Class Current: 257/4
• CPC Class Codes: H10N 70/026 by physical vapor deposition, e.g. sputtering
• CPC Class Codes: H10N 70/068 by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
• CPC Class Codes: H10N 70/20 Multistable switching devices, e.g. memristors
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8265 on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
• CPC Class Codes: H10N 70/8413 adapted for resistive heating
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe
• CPC Class Codes: H10N 70/8833 Binary metal oxides, e.g. TaOx
• CPC Class Codes: H10N 70/8836 Complex metal oxides, e.g. perovskites, spinels
• CPC Class Codes: H10N 70/884 based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883

Abstract

A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.

Claims

1. A memory cell comprising:

a first and a second metal electrode, the electrodes operative to allow the application of the switching signal to the memory cell;

a first feature comprising an electrical conductor, the first feature being in direct physical contact with the first metal electrode;

a second feature, the second feature comprising a dielectric material and defining an opening at least partially overlying the first feature such that the second feature is not in direct physical contact with the first feature;

a substantially columnar third feature, the third feature formed on the first feature such that the third feature is in direct physical contact with the first feature, the third feature partially filling the opening in the second feature, the third feature comprising an electrically conductive material, the third feature being substantially circular or substantially elliptical in a plane parallel to a plane defined by the interface of the third feature and the first feature; and

phase change material, the phase change material at least filling a volume between the second feature and the third feature;

wherein the first feature physically separates the second feature and the first electrode such that there is no direct physical contact between the second feature and the first electrode;

wherein the first feature physically separates the third feature and the first electrode such that there is no direct physical contact between the third feature and the first electrode;

wherein the first feature physically separates the phase change material and the first electrode such that there is no direct physical contact between the phase change material and the first electrode;

wherein the phase change material is in direct physical contact with the first feature;

wherein the phase change material is in direct physical contact with the second feature;

wherein the phase change material is in direct physical contact with the third feature;

wherein the phase change material is in direct physical contact with the second electrode;

wherein the phase change material physically separates the first feature and the second feature such that there is no direct physical contact between the first feature and the second feature;

wherein the phase change material physically separates the second feature and the third feature such that there is no direct physical contact between the second feature and the third feature;

wherein the phase change material physically separates the first feature and the second electrode such that there is no direct physical contact between the first feature and the second electrode; and

wherein the phase change material physically separates the second feature and the second electrode such that there is no direct physical contact between the second feature and the second electrode; and

wherein the phase change material physically separates the third feature and the second electrode such that there is no direct physical contact between the third feature and the second electrode;

wherein at least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell, the portion of the phase change material operative to switch between lower and higher electrical resistance states being substantially located near a surface of the third feature opposite to that formed on the first feature and being substantially located within the volume between the second feature and the third feature; and

wherein the first feature comprises a phase change material having a composition different from that of the phase change material filling the volume between the second feature and the third feature, the phase change material filling the volume between the second feature and the third feature having a higher electrical resistivity than the electrical conductor forming the third feature.