Memory cell array and method of manufacturing the same
First Claim
1. An integrated circuit comprising:
- a plurality of active areas formed in a semiconductor substrate with a substrate surface, each active area having two lateral sides extending along a first direction with rows of active areas being separated from each other by isolation grooves, wherein each active area includes a first source/drain region formed adjacent the substrate surface, a second source/drain region formed adjacent the substrate surface, and a channel region separating the first and second source/drain regions, each of the first and second source/drain regions being distanced from and oriented with respect to each other along the first direction; and
gate electrodes disposed along the channel regions and being electrically isolated from the channel regions by gate isolating layers; and
a plurality of sets of first and second word lines disposed on opposing lateral sides of each of the rows of active areas and with each of the first and second word lines including a length that extends along the first direction, wherein the first and second word lines of each set are connected with each other via the gate electrodes of a corresponding row of active areas.
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Abstract
A memory cell array includes a plurality of active areas in which a plurality of memory cells are formed. A memory cell includes a storage capacitor, a transistor at least partially formed in a semiconductor substrate with a substrate surface, the transistor including a first source/drain region. A second source/drain region being formed adjacent to the substrate surface, a channel region connecting the first and second source/drain regions. The first source/drain region is formed adjacent to the substrate surface. The channel region is disposed in the semiconductor substrate, and a gate electrode. Rows of the active areas are separated from each other by isolation grooves that extend along a first direction. A first and a second word lines are disposed on either lateral sides of each of the rows of active areas. The first and the second word lines are connected with each other via the gate electrodes of the transistors of the corresponding row of active areas.
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Citations
23 Claims
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1. An integrated circuit comprising:
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a plurality of active areas formed in a semiconductor substrate with a substrate surface, each active area having two lateral sides extending along a first direction with rows of active areas being separated from each other by isolation grooves, wherein each active area includes a first source/drain region formed adjacent the substrate surface, a second source/drain region formed adjacent the substrate surface, and a channel region separating the first and second source/drain regions, each of the first and second source/drain regions being distanced from and oriented with respect to each other along the first direction; and gate electrodes disposed along the channel regions and being electrically isolated from the channel regions by gate isolating layers; and a plurality of sets of first and second word lines disposed on opposing lateral sides of each of the rows of active areas and with each of the first and second word lines including a length that extends along the first direction, wherein the first and second word lines of each set are connected with each other via the gate electrodes of a corresponding row of active areas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An integrated circuit including a memory cell array, the memory cell array comprising:
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a plurality of memory cells, each of the memory cells including a transistor with a first source/drain region and a second source/drain region, wherein the first and second source/drain regions are distanced from and oriented with respect to each other along a first direction; and a plurality of word lines, wherein each of the word lines includes a length that extends in the first direction, and wherein each transistor comprises a gate electrode configured to connect with two adjacent word lines. - View Dependent Claims (19, 20, 21, 22, 23)
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Specification