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Semiconductor device having dielectric film having aperture portion

  • US 7,474,002 B2
  • Filed: 10/17/2002
  • Issued: 01/06/2009
  • Est. Priority Date: 10/30/2001
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a first dielectric film having an aperture portion,a semiconductor layer formed in the aperture portion, anda second dielectric film over the first dielectric film and the semiconductor layer,wherein the second dielectric film contacts an upper surface outside the aperture portion of the first dielectric film and extends into the aperture portion to contact an inner side surface of the first dielectric film and a side surface of the semiconductor layer.

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