Method and apparatus for determining an improved assist feature configuration in a mask layout

• US 7,475,382 B2
• Filed: 04/19/2005
• Issued: 01/06/2009
• Est. Priority Date: 02/24/2005
• Status: Active Grant

• Current Assignee: Synopsys Incorporated
• Original Assignee: Synopsys Incorporated
• Inventors: Painter, Benjamin D., Melvin, Lawrence S. III
• Primary Examiner(s): Do; Thuan
• Assistant Examiner(s): Levin; Naum B
• Application Number:
  US11/109,534
• Publication Number:
  US 20060188673A1
• Time in Patent Office: 1,358 Days
• Field of Search: 716 19- 21, 430/5, 703/2, 382144-145
• US Class Current: 716/51
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: Y10T 428/131 Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Abstract

One embodiment of the present invention provides a system that determines the locations and dimensions of one or more assist features in an uncorrected or corrected mask layout. During operation, the system receives a mask layout. The system then creates a set of candidate assist feature configurations, which specify locations and sizes for one or more assist features in the mask layout. Next, the system determines an improved assist feature configuration using the set of candidate assist feature configurations and a process-sensitivity model which can be represented by a multidimensional function that captures process-sensitivity information. Note that placing assist features in the mask layout based on the improved assist feature configuration improves the manufacturability of the mask layout. Moreover, using the process-sensitivity model to determine the improved assist feature configuration reduces the computational time required to determine the improved assist feature configuration in the mask layout.

Claims

1. A method for determining an assist feature configuration which specifies locations and dimensions for one or more assist features in a mask layout, the method comprising:

receiving the mask layout;

creating a set of candidate assist feature configurations;

selecting a set of evaluation points in the mask layout;

determining process-variation values at the set of evaluation points for the set of candidate assist feature configurations, wherein convolving the mask layout with the process-sensitivity model at an evaluation point in the mask layout generates a value that is indicative of the mask layout'"'"'s sensitivity to process variations at the evaluation point,

wherein determining the process-variation values includes;

placing representative assist features in the mask layout based on a candidate assist feature configuration in the set of candidate assist feature configurations;

evaluating process-variation values at the set of evaluation points by convolving the process-sensitivity model with the mask layout; and

determining an improved assist feature configuration using the process-variation values,

wherein determining the improved assist feature configuration using the process-variation values includes;

formulating an optimization problem based on the process-variation values, wherein a solution to the optimization problem is associated with an assist feature configuration;

computing a substantially optimal solution to the optimization problem; and

determining the improved assist feature configuration based on the substantially optimal solution to the optimization problem;

wherein placing assist features in the mask layout based on the improved assist feature configuration improves the mask layout'"'"'s manufacturability;

wherein using the process-sensitivity model to determine the improved assist feature configuration reduces an amount of computational time required to determine the improved assist feature configuration.

2. The method of claim 1, wherein the optimization problem uses an objective function which is a linear combination of variables associated with the process-variation values at the evaluation points.

3. The method of claim 1, wherein the process-sensitivity model is computed by:

creating an on-target process model that models a semiconductor manufacturing process under nominal process conditions;

creating one or more off-target process models that model the semiconductor manufacturing process under one or more process conditions that are different from nominal process conditions; and

computing the process-sensitivity model using the on-target process model and the one or more off-target process models.

4. The method of claim 3, wherein computing the process-sensitivity model involves computing a linear combination of the on-target process model and the one or more off-target process models.

5. The method of claim 3, wherein the semiconductor manufacturing process includes one of:

photolithography;

etch;

chemical-mechanical polishing (CMP);

trench fill;

or

reticle manufacture.

6. The method of claim 1, wherein the mask layout can be an uncorrected or corrected mask layout.

7. A computer-readable storage device storing instructions that when executed by a computer cause the computer to perform a method for determining an assist feature configuration which specifies locations and dimensions for one or more assist features in a mask layout, the method comprising:

receiving the mask layout;

creating a set of candidate assist feature configurations;

selecting a set of evaluation points in the mask layout;

determining process-variation values at the set of evaluation points for the set of candidate assist feature configurations, wherein convolving the mask layout with the process-sensitivity model at an evaluation point in the mask layout generates a value that is indicative of the mask layout'"'"'s sensitivity to process variations at the evaluation point,

wherein determining the process-variation values includes;

placing representative assist features in the mask layout based on a candidate assist feature configuration in the set of candidate assist feature configurations;

evaluating process-variation values at the set of evaluation points by convolving the process-sensitivity model with the mask layout; and

determining an improved assist feature configuration using the process-variation values,

wherein determining the improved assist feature configuration using the process-variation values includes;

formulating an optimization problem based on the process-variation values, wherein a solution to the optimization problem is associated with an assist feature configuration;

computing a substantially optimal solution to the optimization problem; and

determining the improved assist feature configuration based on the substantially optimal solution to the optimization problem;

wherein placing assist features in the mask layout based on the improved assist feature configuration improves the mask layout'"'"'s manufacturability;

wherein using the process-sensitivity model to determine the improved assist feature configuration reduces an amount of computational time required to determine the improved assist feature configuration.

8. The computer-readable storage device of claim 7, wherein the optimization problem uses an objective function which is a linear combination of variables associated with the process-variation values at the evaluation points.

9. The computer-readable storage device of claim 7, wherein the process-sensitivity model is computed by:

creating an on-target process model that models a semiconductor manufacturing process under nominal process conditions;

creating one or more off-target process models that model the semiconductor manufacturing process under one or more process conditions that are different from nominal process conditions; and

computing the process-sensitivity model using the on-target process model and the one or more off-target process models.

10. The computer-readable storage device of claim 9, wherein computing the process-sensitivity model involves computing a linear combination of the on-target process model and the one or more off-target process models.

11. The computer-readable storage device of claim 9, wherein the semiconductor manufacturing process includes one of:

photolithography;

etch;

chemical-mechanical polishing (CMP);

trench fill;

or

reticle manufacture.

12. The computer-readable storage device of claim 7, wherein the mask layout can be an uncorrected or corrected mask layout.