High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
First Claim
1. A vacuum chamber comprising:
- a chamber top;
a gas distribution member and an external chamber body;
the gas distribution member comprising an internal chamber body configured to be slidably supported on the external chamber body with a gap between outer surfaces of the internal chamber body and inner surfaces of the external chamber body;
gas passages extending through a central upper portion of the internal chamber body, the gas passages adapted to direct process gas into the chamber towards the semiconductor substrate;
a domed inner surface adapted to overlie the substrate and confine the process gas in a space; and
a central upper vacuum sealing surface surrounding the gas passages and adapted to form a vacuum seal with a lower surface of the chamber top;
the external chamber body having a sidewall and an annular recess in an upper portion of the sidewall, slidably supporting the internal chamber body and configured to surround a side of said internal chamber body with a vacuum gap therebetween;
an exhaust unit operative to pump the process gas from said chamber;
the chamber top having a central portion thereof slidably mounted on the central upper portion of said internal chamber body so as to cover a top surface of said internal chamber body with an ambient gap therebetween outward of the central portion and having an opening in fluid communication with said gas passages; and
a plasma source operative to energize process gas and coupled to said opening for fluid communication with said opening in the chamber top.
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Accused Products
Abstract
A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the internal chamber body. The internal chamber body is slidably mounted on an external chamber body that surrounds a side of the internal chamber with a gap therebetween. The device also includes: an exhaust unit operative to pump the gas from the cavity; a chamber top mounted on the internal chamber body to cover a top surface of the internal chamber body with a gap therebetween and having an opening in fluid communication with the gas passages; and a plasma source operative to energize the gas into a plasma state and coupled to the opening for fluid communication with the cavity.
393 Citations
21 Claims
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1. A vacuum chamber comprising:
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a chamber top; a gas distribution member and an external chamber body; the gas distribution member comprising an internal chamber body configured to be slidably supported on the external chamber body with a gap between outer surfaces of the internal chamber body and inner surfaces of the external chamber body;
gas passages extending through a central upper portion of the internal chamber body, the gas passages adapted to direct process gas into the chamber towards the semiconductor substrate;
a domed inner surface adapted to overlie the substrate and confine the process gas in a space; and
a central upper vacuum sealing surface surrounding the gas passages and adapted to form a vacuum seal with a lower surface of the chamber top;the external chamber body having a sidewall and an annular recess in an upper portion of the sidewall, slidably supporting the internal chamber body and configured to surround a side of said internal chamber body with a vacuum gap therebetween; an exhaust unit operative to pump the process gas from said chamber; the chamber top having a central portion thereof slidably mounted on the central upper portion of said internal chamber body so as to cover a top surface of said internal chamber body with an ambient gap therebetween outward of the central portion and having an opening in fluid communication with said gas passages; and a plasma source operative to energize process gas and coupled to said opening for fluid communication with said opening in the chamber top. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification