Selective formation of metal layers in an integrated circuit
First Claim
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1. A method for selectively forming a conductive layer in an integrated circuit, comprising:
- providing a copper-exposed surface as a first surface and a non-copper surface as a second surface; and
contacting the first surface and the second surface with a vapor phase compound of a noble metal for replacing copper on the first surface with the noble metal dissociated from the compound, thereby depositing the noble metal predominantly on the first surface relative to the second surface as a result of replacing copper on the first surface with the noble metal dissociated from the compound.
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Abstract
A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.
127 Citations
45 Claims
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1. A method for selectively forming a conductive layer in an integrated circuit, comprising:
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providing a copper-exposed surface as a first surface and a non-copper surface as a second surface; and contacting the first surface and the second surface with a vapor phase compound of a noble metal for replacing copper on the first surface with the noble metal dissociated from the compound, thereby depositing the noble metal predominantly on the first surface relative to the second surface as a result of replacing copper on the first surface with the noble metal dissociated from the compound. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A method for selectively forming a conductive layer in an integrated circuit, comprising:
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providing a copper-exposed surface as a first surface and a non-copper surface as a second surface, the first surface being defined by a metal feature of the integrated circuit, the metal feature comprising copper; contacting the first surface and the second surface with a vapor phase compound of a noble metal; and performing a replacement reaction, wherein the copper of the metal feature is replaced with the noble metal dissociated from the vapor phase compound of the noble metal, thereby depositing the noble metal predominantly on the first surface relative to the second surface. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification