Method for manufacturing silicon epitaxial wafer
First Claim
1. A silicon epitaxial wafer manufacturing method in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate which is subjected to a mirror polishing finished on a rear surface, while heating the silicon single crystal substrate introduced into a reaction chamber comprising:
- etching an inside of the reaction chamber with a hydrogen chloride gas to remove a silicon deposit deposited in the reaction chamber in a state that a silicon single crystal substrate is not introduced in the reaction chamber;
thereafter performing a primary cooling in the reaction chamber;
subsequently performing a secondary heating of an inside of the reaction chamber;
subsequently performing a secondary cooling of the inside of the reaction chamber; and
thereafter introducing a silicon single crystal substrate into the reaction chamber to perform the vapor phase growth; and
forming a silicon thin film in the reaction chamber by introducing a silicon material gas in the reaction chamber after the etching, which is followed by the primary cooling,wherein the hydrogen chloride gas does not exist in the reaction chamber during both of the secondary heating and the secondary cooling.
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Abstract
A silicon epitaxial wafer manufacturing method, in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate (W) arranged in the reaction chamber (12). A silicon deposit deposited in the reaction chamber (12) is removed by etching an inside of the reaction chamber (12) with a hydrogen chloride gas in a state that a silicon crystal substrate (W) is not introduced, and thereafter, a primary cooling is performed in the reaction chamber (12). Subsequently, a secondary cooling is performed after heating an inside of the reaction chamber (12), and thereafter, the vapor phase growth is performed to manufacture a silicon epitaxial wafer.
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Citations
5 Claims
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1. A silicon epitaxial wafer manufacturing method in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate which is subjected to a mirror polishing finished on a rear surface, while heating the silicon single crystal substrate introduced into a reaction chamber comprising:
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etching an inside of the reaction chamber with a hydrogen chloride gas to remove a silicon deposit deposited in the reaction chamber in a state that a silicon single crystal substrate is not introduced in the reaction chamber; thereafter performing a primary cooling in the reaction chamber; subsequently performing a secondary heating of an inside of the reaction chamber; subsequently performing a secondary cooling of the inside of the reaction chamber; and thereafter introducing a silicon single crystal substrate into the reaction chamber to perform the vapor phase growth; and
forming a silicon thin film in the reaction chamber by introducing a silicon material gas in the reaction chamber after the etching, which is followed by the primary cooling,wherein the hydrogen chloride gas does not exist in the reaction chamber during both of the secondary heating and the secondary cooling. - View Dependent Claims (2, 3, 4, 5)
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Specification