Method for manufacturing silicon epitaxial wafer

• US 7,479,187 B2
• Filed: 08/19/2003
• Issued: 01/20/2009
• Est. Priority Date: 08/28/2002
• Status: Active Grant

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Otsuka, Toru
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US10/495,870
• Publication Number:
  US 20050160971A1
• Time in Patent Office: 1,981 Days
• Field of Search: None
• US Class Current: 117/89
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/06 Silicon

Abstract

A silicon epitaxial wafer manufacturing method, in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate (W) arranged in the reaction chamber (12). A silicon deposit deposited in the reaction chamber (12) is removed by etching an inside of the reaction chamber (12) with a hydrogen chloride gas in a state that a silicon crystal substrate (W) is not introduced, and thereafter, a primary cooling is performed in the reaction chamber (12). Subsequently, a secondary cooling is performed after heating an inside of the reaction chamber (12), and thereafter, the vapor phase growth is performed to manufacture a silicon epitaxial wafer.

Claims

1. A silicon epitaxial wafer manufacturing method in which a vapor phase growth of a silicon epitaxial layer is performed on a front surface of a silicon single crystal substrate which is subjected to a mirror polishing finished on a rear surface, while heating the silicon single crystal substrate introduced into a reaction chamber comprising:

etching an inside of the reaction chamber with a hydrogen chloride gas to remove a silicon deposit deposited in the reaction chamber in a state that a silicon single crystal substrate is not introduced in the reaction chamber;

thereafter performing a primary cooling in the reaction chamber;

subsequently performing a secondary heating of an inside of the reaction chamber;

subsequently performing a secondary cooling of the inside of the reaction chamber; and

thereafter introducing a silicon single crystal substrate into the reaction chamber to perform the vapor phase growth; and

forming a silicon thin film in the reaction chamber by introducing a silicon material gas in the reaction chamber after the etching, which is followed by the primary cooling,

wherein the hydrogen chloride gas does not exist in the reaction chamber during both of the secondary heating and the secondary cooling.

2. The silicon epitaxial wafer manufacturing method as claimed in claim 1, wherein the vapor phase growth is performed by using a single wafer type vapor phase growth apparatus.

3. The silicon epitaxial wafer manufacturing method as claimed in claim 1, wherein a silicon single crystal substrate which was subjected to a mirror polishing finished on a rear surface is used.

4. The silicon epitaxial wafer manufacturing method as claimed in claim 1, wherein a temperature in the reaction chamber is cooled down to an introduction temperature of a silicon single crystal substrate by the secondary cooling.

5. The silicon epitaxial wafer manufacturing method as claimed in claim 4, wherein the vapor phase growth is performed by using a single wafer type vapor phase growth apparatus.