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MgO/NiFe MTJ for high performance MRAM application

  • US 7,479,394 B2
  • Filed: 12/22/2005
  • Issued: 01/20/2009
  • Est. Priority Date: 12/22/2005
  • Status: Active Grant
First Claim
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1. A method to form a tunneling barrier layer, comprising:

  • by means of D.C. sputtering, depositing a first magnesium layer to a first thickness;

    fully oxidizing said first magnesium layer by means of radical oxidation, thereby forming a first layer of magnesium oxide;

    depositing a second magnesium layer to a second thickness on said first magnesium oxide layer;

    then fully oxidizing said second magnesium layer by means of natural oxidation, thereby forming said tunneling barrier layer; and

    annealing said tunneling barrier layer in a magnetic field having a direction, whereby said first magnesium oxide layer has a preferred 001 crystal orientation.

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