MgO/NiFe MTJ for high performance MRAM application

• US 7,479,394 B2
• Filed: 12/22/2005
• Issued: 01/20/2009
• Est. Priority Date: 12/22/2005
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: MagIC Technologies Inc (TDK Corporation)
• Inventors: Tong, Ru-Ying, Horng, Cheng T.
• Primary Examiner(s): Pham; Thanh V
• Application Number:
  US11/317,388
• Publication Number:
  US 20070148786A1
• Time in Patent Office: 1,125 Days
• Field of Search: 438/3, 438/652, 438/658, 438/665, 257/E21.665
• US Class Current: 438/3
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C23C 14/5853 Oxidation
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 41/18 by cathode sputtering
• CPC Class Codes: H01F 41/307 insulating or semiconductive spacer
• CPC Class Codes: H10N 50/01 Manufacture or treatment

Abstract

An improved tunneling barrier layer is formed for use in a MTJ device. This is accomplished by forming the tunneling barrier layer in two steps. First a layer of magnesium is deposited by DC sputtering and converted to magnesium oxide through radical oxidation. This is followed by a second, thinner, magnesium layer that is converted to magnesium oxide through normal oxidation. Optionally, there may also be a thin layer of magnesium on the two magnesium oxide layers.

Claims

1. A method to form a tunneling barrier layer, comprising:

by means of D.C. sputtering, depositing a first magnesium layer to a first thickness;

fully oxidizing said first magnesium layer by means of radical oxidation, thereby forming a first layer of magnesium oxide;

depositing a second magnesium layer to a second thickness on said first magnesium oxide layer;

then fully oxidizing said second magnesium layer by means of natural oxidation, thereby forming said tunneling barrier layer; and

annealing said tunneling barrier layer in a magnetic field having a direction, whereby said first magnesium oxide layer has a preferred 001 crystal orientation.

2. The method described in claim 1 wherein said first thickness is between about 10 and 13 Angstroms.

3. The method described in claim 1 wherein the step of radical oxidation further comprises using an upper electrode to excite oxygen, that flows over it at between about 0.3 and 0.5 SLM, at a power level of between about 400 and 600 watts, and then passing said excited oxygen over said first magnesium layer.

4. The method described in claim 1 wherein said second thickness is between about 3 and 5 Angstroms.

5. The method described in claim 1 wherein the step of natural oxidation further comprises exposing said second magnesium layer to oxygen at a pressure of between about 0.5 and 1 torr for between 1 and 5 minutes.

6. The method described in claim 1 wherein the step of

annealing said magnesium oxide layers further comprises heating at a temperature between about 300 and 400°

C. for between about 60 and 120 minutes, in a magnetic field of between about 5 and 10 kOe said direction being parallel to an easy axis.

7. The method described in claim 1 wherein said complete tunneling barrier layer is free of all particulate contamination.

8. A method to form a tunneling barrier layer, comprising:

by means of D.C. sputtering, depositing a first magnesium layer to a first thickness;

fully oxidizing said first magnesium layer by means of a first radical oxidation, thereby forming a first layer of magnesium oxide;

depositing a second magnesium layer to a second thickness on said first magnesium oxide layer;

fully oxidizing said second magnesium layer by means of a second radical oxidation, thereby forming a second layer of magnesium oxide; and

depositing a third magnesium layer to a third thickness on said second magnesium oxide layer thereby completing formation of said tunneling barrier layer.

9. The method described in claim 8 wherein said first thickness is between about 10 and 13 Angstroms.

10. The method described in claim 8 wherein the step of first radical oxidation further comprises using an upper electrode to excite oxygen, that flows over it at between about 0.3 and 0.5 SLM, at a power level of between about 400 and 600 watts, and then passing said excited oxygen over said first magnesium layer for between about 80 and 150 seconds.

11. The method described in claim 8 wherein said second thickness is between about 3 and 5 Angstroms.

12. The method described in claim 8 wherein the step of second radical oxidation further comprises using an upper electrode to excite oxygen, that flows over it at between about 0.2 and 0.3 SLM, at a power level of between about 200 and 300 watts, and then passing said excited oxygen over said first magnesium layer for between about 80 and 150 seconds .

13. The method described in claim 8 wherein said third thickness is between about 3 and 5 Angstroms.

14. The method described in claim 8 wherein said complete tunneling barrier layer is free of all particulate contamination.

15. A process to manufacture a magnetic tunnel junction memory element, including a tunneling barrier layer, comprising:

providing a seed layer on a lower electrode;

depositing an antiferromagnetic layer on said seed layer;

depositing a pinned layer on said antiferromagnetic layer;

by means of D.C. sputtering, depositing a first magnesium layer, having a first thickness, on said pinned layer;

fully oxidizing said first magnesium layer by means of radical oxidation, thereby forming a first layer of magnesium oxide;

annealing said first magnesium oxide layer in a magnetic field having a direction, whereby said first magnesium oxide layer acquires a preferred 001 crystal orientation;

depositing a second magnesium layer to a second thickness on said first magnesium oxide layer;

then fully oxidizing said second magnesium layer by means of natural oxidation, thereby forming a magnesium oxide tunneling barrier layer having a thickness between about 3 and 5 Angstroms;

depositing a free layer on said tunneling barrier layer; and

depositing a capping layer on said free layer.

16. The process recited in claim 15 wherein said first thickness is between about 11 and 13 Angstroms.

17. The process recited in claim 15 wherein the step of radical oxidation further comprises using an upper electrode to excite oxygen, that flows over it at between about 0.3 and 0.5 SLM, at a power level of between about 400 and 600 watts, and then passing said excited oxygen over said first magnesium layer.

18. The method described in claim 15 wherein said second thickness is between about 3 and 5 Angstroms.

19. The method described in claim 15 wherein the step of natural oxidation further comprises exposing said second magnesium layer to oxygen at a pressure of between about 0.5 and 1 torr for between 1 and 5 minutes.

20. The method described in claim 15 wherein the step of annealing said magnesium oxide layers further comprises heating at a temperature between about 300 and 400°

C. for between about 60 and 120 minutes, in a magnetic field of between about 5 and 10 kOe said direction being parallel to an easy axis.

21. The process recited in claim 15 wherein said complete tunneling barrier layer is free of all particulate contamination.

22. The process recited in claim 15 wherein said memory element has a dR/R value of at least 60% and a R.A. product that is no greater than 1,000 ohm. μ

m².

23. A method to form a tunneling barrier layer, comprising:

by means of D.C. sputtering, depositing a first magnesium layer to a thickness of from about 10 to 13 Angstroms;

fully oxidizing said first magnesium layer by means of radical oxidation, thereby forming a first layer of magnesium oxide;

on said first magnesium oxide layer, depositing a second magnesium layer to a thickness of from about 3 to 5 Angstroms;

then fully oxidizing said second magnesium layer by means of radical oxidation, thereby forming a second layer of magnesium oxide;

on said second magnesium oxide layer, depositing a third magnesium layer to a thickness of from about 3 to 4 Angstroms, thereby completing formation of said tunneling barrier layer; and

annealing said tunneling barrier layer in a magnetic field having a direction, whereby said first magnesium oxide layer has a preferred 001 crystal orientation and said third magnesium layer acts to getter oxygen away from both said second magnesium oxide layer and from a subsequently deposited free layer.