Gasless high voltage high contact force wafer contact-cooling electrostatic chuck

• US 7,479,456 B2
• Filed: 08/26/2004
• Issued: 01/20/2009
• Est. Priority Date: 08/26/2004
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hanawa, Hiorji, Hoffman, Daniel J., Buchberger, Douglas A. Jr., Ramaswamy, Kartik, Collins, Kenneth S., Nguyen, Andrew, Al-Bayati, Amir
• Primary Examiner(s): DEO, DUY VU NGUYEN
• Application Number:
  US10/929,104
• Publication Number:
  US 20060043065A1
• Time in Patent Office: 1,608 Days
• Field of Search: None
• US Class Current: 438/706
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.

Claims

1. A method of processing a workpiece in a plasma reactor, comprising:

providing a polished surface on a puck in the reactor;

placing the workpiece over the polished surface of the puck;

cooling the puck;

heating said workpiece by coupling RF power to plasma in said reactor;

introducing a process gas into said reactor;

applying a chucking voltage to a chucking electrode of the puck to pull the workpiece into direct contact with a top surface of the puck with sufficient electrostatic force to remove heat from the workpiece through directly contacting surfaces of the puck and workpiece at about the rate at which heat is deposited in the workpiece; and

maintaining the temperature of said workpiece within a desired temperature range by controlling said chucking voltage.

2. The method of claim 1 further comprising providing a charge-mobile layer in said puck between said chucking electrode and said polished surface of said puck, and wherein the step of applying a chucking voltage causes mobile charge to travel across said charge mobile layer so as to enhance said electrostatic force.

3. The method of claim 1 wherein the step of coupling RF power comprises applying RF power at a power density in excess of about 5 Watts/sq. cm on said workpiece.

4. The method of claim 3 wherein said power density is in excess of about 6 Watts/sq. cm.

5. The method of claim 3 wherein said power density is in excess of about 7 Watts/sq. cm.

6. The method of claim 3 wherein the step of coupling RF power to plasma further comprises generating an RF bias voltage on said workpiece in excess of about 4 kV peak-to-peak.

7. The method of claim 1 wherein the step of heating said workpiece by coupling RF power to plasma in the reactor comprises indirectly heating the wafer with RF power by coupling RF plasma source power directly to plasma in the reactor, whereby said workpiece is heated by interaction with the plasma.

8. The method of claim 1 wherein said chucking voltage is sufficient to attain an electrostatic pressure in excess of about 20 T.

9. The method of claim 1 wherein said chucking voltage is sufficient to limit the temperature of said workpiece below a certain maximum temperature.

10. The method of claim 9 wherein said maximum temperature is on the order of about 700 degrees C.

11. The method of claim 3 wherein:

said chucking voltage is sufficient to limit the temperature of said workpiece below a certain maximum temperature; and

the step of coupling RF power comprises coupling RF power to said workpiece at a power density in excess of 5 Watts/sq. cm.

12. The method of claim 1 wherein said chucking voltage is set to a point at which a desired temperature of said workpiece is attained.

13. The method of claim 1 wherein the step of controlling said chucking voltage comprises providing a greater chucking voltage for a greater rate of heat dissipation in said workpiece.

14. The method of claim 1 wherein said chucking voltage is sufficient to attain a heat transfer coefficient between the contacting surfaces of the workpiece and puck in excess of about 1000 Watts/m²°

K.

15. The method of claim 1 wherein the step of providing a polished generally continuous surface comprises polishing a top surface of the puck to an optical mirror-like finish surface finish.

16. The method of claim 15 wherein the step of polishing comprises polishing said surface to a surface finish on the order of several micro-inches RMS deviation or less.

17. The method of claim 1 wherein the step of providing a polished surface comprises machining said surface flat over at least 30% of the cross-sectional area of said puck.

18. The method of claim 1 wherein the step of providing a polished surface comprises machining said surface flat over at least 60% of the cross-sectional area of said puck.

19. The method of claim 1 wherein the step of providing a polished surface comprises machining said surface flat over at least 90% of the cross-sectional area of said puck.

20. The method of claim 1 further comprising providing a non-uniform radial distribution of heat transfer rate between the contacting surfaces of the wafer and the puck.

21. The method of claim 20 wherein said non-uniform radial distribution is center-high.

22. The method of claim 20 wherein said non-uniform radial distribution is center-low.

23. The method of claim 20 wherein the step of providing a non-uniform radial distribution of heat transfer rate comprises:

providing a top surface on the puck that is curved.

24. The method of claim 20 further comprising:

coupling RF power to the wafer during plasma processing with a radially non-uniform distribution of RF-induced heat dissipation in the wafer; and

wherein the step of providing a non-uniform radial distribution of heat transfer rate comprises compensating for the radially non-uniform distribution of RF-induced heat dissipation in the wafer.

26. The method of claim 1 wherein said voltage is sufficient to reduce an effective air gap between the wafer and the polished surface of the puck to less than about 3 microns.

25. A method of processing a workpiece in a plasma reactor, comprising:

providing a polished surface on a puck in the reactor;

placing the workpiece over the polished surface of the puck;

cooling the puck;

heating said workpiece by coupling RF power to plasma in said reactor;

introducing a process gas into said reactor;

applying a chucking voltage to a chucking electrode of the puck to pull the workpiece into direct contact with a top surface of the puck with sufficient electrostatic force to remove heat from the workpiece through directly contacting surfaces of the puck and workpiece at about the rate at which heat is deposited in the workpiece; and

controlling said chucking voltage so as to minimize a difference between a measured temperature of said workpiece and a target temperature.

27. A method of processing a workpiece in a plasma reactor, comprising:

providing a polished surface on a puck in the reactor;

placing the workpiece over the polished surface of the puck;

cooling the puck;

heating said workpiece by coupling RF power to plasma in said reactor;

introducing a process gas into said reactor;

applying a chucking voltage to a chucking electrode of the puck to pull the workpiece into direct contact with a top surface of the puck with sufficient electrostatic force to remove heat from the workpiece through directly contacting surfaces of the puck and workpiece at about the rate at which heat is deposited in the workpiece;

providing a non-uniform radial distribution of heat transfer rate between the contacting surfaces of the wafer and the puck;

wherein the step of providing a non-uniform radial distribution of heat transfer rate comprises;

providing plural electrodes within the puck at respective radial zones; and

applying separate voltages to the respective plural electrodes so as to produce different attractive forces between the wafer and the puck in different ones of the respective radial zones.

28. A method of processing a workpiece in a plasma reactor, comprising:

providing a polished surface on a puck in the reactor;

placing the workpiece over the polished surface of the puck;

cooling the puck;

heating said workpiece by coupling RF power to plasma in said reactor;

introducing a process gas into said reactor;

applying a chucking voltage to a chucking electrode of the puck to pull the workpiece into direct contact with a top surface of the puck with sufficient electrostatic force to remove heat from the workpiece through directly contacting surfaces of the puck and workpiece at about the rate at which heat is deposited in the workpiece;

providing a non-uniform radial distribution of heat transfer rate between the contacting surfaces of the wafer and the puck; and

wherein the step of providing a non-uniform radial distribution of heat transfer rate comprises providing a non-uniform radial distribution of polished surface finish on the surface of the puck.

29. A method of processing a workpiece in a plasma reactor, comprising:

providing a polished surface on a puck in the reactor;

placing the workpiece over the polished surface of the puck;

cooling the puck;

heating said workpiece by coupling RF power to plasma in said reactor;

introducing a process gas into said reactor;

applying a chucking voltage to a chucking electrode of the puck to pull the workpiece into direct contact with a top surface of the puck with sufficient electrostatic force to remove heat from the workpiece through directly contacting surfaces of the puck and workpiece at about the rate at which heat is deposited in the workpiece;

providing a non-uniform radial distribution of heat transfer rate between the contacting surfaces of the wafer and the puck; and

wherein the step of providing a non-uniform radial distribution of heat transfer rate comprises providing a top surface of the puck that is one of (a) convex, (b) concave.

30. A method of processing a workpiece in a plasma reactor, comprising:

providing a polished surface on a puck in the reactor;

placing the workpiece over the polished surface of the puck;

cooling the puck;

heating said workpiece by coupling RF power to plasma in said reactor;

introducing a process gas into said reactor;

applying a chucking voltage to a chucking electrode of the puck to pull the workpiece into direct contact with a top surface of the puck with sufficient electrostatic force to remove heat from the workpiece through directly contacting surfaces of the puck and workpiece at about the rate at which heat is deposited in the workpiece;

prior to the step of placing the wafer on the top surface of the puck, depositing a seasoning layer on the interior surfaces of the reactor so as to form a puck seasoning layer on the polished puck top surface, whereby the top surface of the puck comprises said seasoning layer;

wherein the step of placing the wafer on a top surface of the puck comprises placing the wafer on the puck seasoning layer whereby the wafer directly contacts said seasoning layer;

during the step of applying RF power to the reactor, introducing a process gas into the reactor and carrying out plasma processing of the wafer;

removing the wafer from the reactor upon completion of the plasma processing; and

removing said seasoning layer from the interior surfaces of the reactor.

31. The method of claim 30 wherein the step of removing the seasoning layer comprises introducing into said reactor an etchant species.

32. The method of claim 31 wherein said seasoning layer comprises one of silicon dioxide, germanium dioxide, silicon nitride, germanium nitride, silicon carbide, aluminum nitride, aluminum oxide, a fluorocarbon polymer, a fluoro-hydrocarbon polymer, a nitride of a silicon hydride, a hydrocarbon, hydride of silicon, hydride of germanium.

33. The method of claim 31 wherein said etchant species comprises one of NF3, F, O, H.

34. The method of claim 31 wherein the step of introducing an etchant species into the reactor comprises generating in a seasoning removal plasma one of:

(a) a radicals, (b) reactive ions.

35. The method of claim 34 wherein the seasoning removal plasma is formed in said reactor.

36. The method of claim 34 wherein the seasoning removal plasma is formed in an external source.