Semiconductor device having transparent member and manufacturing method of the same

• US 7,479,627 B2
• Filed: 04/24/2006
• Issued: 01/20/2009
• Est. Priority Date: 02/09/2006
• Status: Expired due to Fees

• Current Assignee: Socionext Inc.
• Original Assignee: Fujitsu Microelectronics Limited (Fujitsu Limited)
• Inventors: Shimobeppu, Yuzo, Shinjo, Yoshiaki, Yoshimoto, Kazuhiro, Teshirogi, Kazuo
• Primary Examiner(s): Epps; Georgia Y
• Assistant Examiner(s): Ko; Tony
• Application Number:
  US11/408,970
• Publication Number:
  US 20070181792A1
• Time in Patent Office: 1,002 Days
• Field of Search: 250/239, 257/433, 257/434, 438/64, 438/65
• US Class Current: 250/239
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

A semiconductor device, includes a semiconductor substrate having a main surface where a light receiving element area is formed; a projection part provided in the periphery of the light receiving element area on the main surface of the semiconductor substrate; an adhesive material layer provided in the external periphery of the projection part on the main surface of the semiconductor substrate; and a transparent plate supported by the projection part and fixed above the light receiving element area by the adhesive material layer.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate having a main surface where a light receiving element area is formed;

a projection part provided in the periphery of the light receiving element area on the main surface of the semiconductor substrate;

an adhesive material layer provided in the external periphery of the projection part on the main surface of the semiconductor substrate;

a transparent plate supported by the projection part and fixed above the light receiving element area by the adhesive material layer, wherein the projection part comes in contact with a lower surface of the transparent plate;

the projection part and the transparent plate are made of materials different from each other;

wherein the projection part is formed by a first projection part and a second projection part; and

the adhesive layer is provided between the first projection part and the second projection part;

wherein the semiconductor substrate is fixed to a supporting substrate;

a piercing electrode electrically connecting the semiconductor substrate and the supporting substrate is formed so as to pierce inside of the semiconductor substrate; and

the piercing electrode is provided in the semiconductor substrate between the first projection part and the second projection part.

2. The semiconductor device as claimed in claim 1,

wherein the semiconductor substrate is fixed to a supporting substrate;

and

a piercing electrode electrically connecting the semiconductor substrate and the supporting substrate is formed so as to pierce inside of the semiconductor substrate.

3. The semiconductor device as claimed in claim 2,

wherein the projection part is formed between the light receiving element area and a part of the main surface of the semiconductor substrate, the part corresponding to where the piercing electrode is formed.

4. The semiconductor device as claimed in claim 2,

wherein the projection part is formed outside of a part of the main surface of the semiconductor substrate, the part corresponding to where the piercing electrode is formed.

5. The semiconductor device as claimed in claim 2,

wherein the projection part is formed on a part of the main surface of the semiconductor substrate, the part corresponding to where the piercing electrode is formed.

6. The semiconductor device as claimed in claim 2,

wherein the piercing electrode is formed in the semiconductor substrate outside of the light receiving element area.

7. The semiconductor device as claimed in claim 1,

wherein the projection part is formed on the main surface of the semiconductor substrate so as to surround the light receiving element area;

and

the projection part includes a curved line part.

8. The semiconductor device as claimed in claim 1,

wherein a coefficient of viscosity of the adhesive layer is equal to or less than 1 Pa·

s.

9. The semiconductor device as claimed in claim 1,

wherein a filler is added into the adhesive layer.

10. The semiconductor device as claimed in claim 1,

wherein the projection part is formed by a material selected from a group consisting of a liquid state resist material, a dry film, polyimide, and a nitride film using photolithography.

11. The semiconductor device as claimed in claim 1,

wherein the adhesive material layer has the same height as the height of the projection part.