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Semiconductor device with modified mobility and thin film transistor having the same

  • US 7,479,667 B2
  • Filed: 12/28/2004
  • Issued: 01/20/2009
  • Est. Priority Date: 12/30/2003
  • Status: Expired due to Fees
First Claim
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1. A thin film transistor comprising:

  • a Si-based channel having an active area including at least two high mobility areas and at least one low mobility area along an electron mobility path of a thin film transistor, the two high mobility areas being separated by the low mobility area along the electron mobility path of the Si-based channel;

    a source and a drain which are respectively formed on sides of the Si-based channel along the electron mobility path;

    a gate for applying an electric field to the Si-based channel; and

    an insulating layer interposed between the active area and the gate,wherein said Si-based channel includes more than two high mobility areas and a plurality of low mobility areas.

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