Detachable electrostatic chuck for supporting a substrate in a process chamber

• US 7,480,129 B2
• Filed: 09/07/2005
• Issued: 01/20/2009
• Est. Priority Date: 03/31/2004
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Brown, Karl, Lau, Allen, Mehta, Vineet, Tsai, Cheng-Hsiung, Sherstinsky, Semyon, Sansoni, Steve, Wang, Wei W.
• Primary Examiner(s): Sherry; Michael J
• Assistant Examiner(s): KITOV, ZEEV V
• Application Number:
  US11/221,169
• Publication Number:
  US 20060002053A1
• Time in Patent Office: 1,231 Days
• Field of Search: 361/234, 451/296
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.

Claims

1. An electrostatic chuck for attachment to a pedestal in a substrate processing chamber capable of processing a substrate in an energized process gas, the electrostatic chuck comprising:

(a) at least one electrode capable of being charged to energize a process gas;

(b) a dielectric covering the electrode;

(c) a frontside surface to receive a substrate;

(d) an annular flange; and

(e) a backside surface comprising a central protrusion having asymmetrically offset orifices for receiving electrode terminal posts and a gas tube, wherein at least one orifice is offset from another orifice by an angle of from about 115 to about 135°

.

2. A chuck according to claim 1 wherein the backside surface comprises an annular trough surrounding the central protrusion.

3. A chuck according to claim 1 wherein the central protrusion comprises a D-shaped mesa.

4. A chuck according to claim 1 wherein the angle is about 125°

.

5. A chuck according to claim 1 wherein an orifice positioned at the center of the central protrusion comprises a gas port, and is surrounded by a first O-ring groove.

6. A chuck according to claim 5 comprising a second O-ring groove that extends around the central protrusion.

7. A chuck according to claim 5 wherein the dielectric comprises a ceramic having a pair of electrodes embedded therein, the ceramic being joined to a base plate comprising porous ceramic infiltrated with metal.

8. A substrate support comprising the electrostatic chuck of claim 1, and further comprising a pedestal to receive the electrostatic chuck, the pedestal comprising a cavity shaped to receive the central protrusion and a peripheral ledge to receive the annular flange.

9. An electrostatic chuck for attachment to a pedestal in a substrate processing chamber capable of processing a substrate in an energized process gas, the electrostatic chuck comprising:

(a) at least one electrode capable of being charged to energize a process gas;

(b) a dielectric covering the electrode;

(c) a frontside surface to receive a substrate;

(d) an annular flange; and

(e) a backside surface comprising a D-shaped mesa surrounded by an annular trough, the D-shaped mesa comprising asymmetrically offset orifices that include at least one orifice that is offset from another orifice by an angle of from about 115 to about 135°

.

10. A chuck according to claim 9 wherein the asymmetrically offset orifices are provided for receiving electrode terminal posts and a gas tube.

11. A chuck according to claim 9 wherein the dielectric comprises a ceramic having a pair of electrodes embedded therein, and wherein the ceramic is joined to a base plate comprising porous ceramic infiltrated with metal.

12. A substrate support for a substrate processing chamber capable of processing a substrate in an energized process gas, the support comprising:

(a) an electrostatic puck comprising a dielectric covering at least one electrode capable of being charged to energize a process gas and having a frontside surface to receive a substrate;

(b) a base plate attached to the electrostatic puck, the base plate comprising (i) a composite of porous ceramic and infiltrated metal, (ii) an annular flange extending beyond the periphery of the dielectric, and (iii) a backside surface comprising a central protrusion with a circular contour portion having a radial center, the central protrusion having asymmetrically offset orifices for receiving electrode terminal posts and a gas tube, the orifices being offset from one another by asymmetric angles which are measured from the radial center of the circular contour portion; and

(c) a pedestal having a peripheral ledge capable of being attached to the annular flange of the base plate, and a cavity shaped to correspond to, and receive, the central protrusion of the base plate.

13. A support according to claim 12 wherein the asymmetrically offset orifices are offset from one another by an asymmetric angle of from about 115 to about 135°

.

14. A support according to claim 12 wherein an orifice positioned at the center of the central protrusion comprises a gas port, and is surrounded by a first O-ring groove, and a second O-ring groove extends around the central protrusion.

15. A support according to claim 12 wherein the base plate is bonded to the electrostatic puck with a diffusion bonded metal.

27. A support according to claim 12 wherein the central protrusion of the backside surface of the back plate is surrounded by an annular trough.

28. A support according to claim 12 wherein the central protrusion of the backside surface of the back plate is a D-shaped mesa.

16. A substrate support for a substrate processing chamber capable of processing a substrate in an energized process gas, the support comprising:

(a) an electrostatic chuck comprising;

(i) an electrostatic puck comprising a dielectric covering at least one electrode capable of being charged to energize a process gas and having a frontside surface to receive a substrate; and

(ii) a base plate below the electrostatic puck, the base plate having an annular flange, and a backside surface comprising a central protrusion with a circular contour portion having a radial center, the central protrusion having asymmetrically offset orifices for receiving electrode terminal posts and a gas tube, the orifices being offset from one another by asymmetric angles which are measured from the radial center of the circular contour portion;

(b) a pedestal having a peripheral ledge to attach to the annular flange of the base plate of the electrostatic chuck; and

(c) a spring loaded heat transfer plate on the pedestal to contact the electrostatic chuck, the heat transfer plate comprising (i) a fluid channel, (ii) a first plate comprising a first material, and (iii) a second plate comprising a second material that is a different material from the first material, the second plate positioned below the first plate.

17. A support according to claim 16 wherein the fluid channel comprises first and second spiral channels, the first spiral channel capable of having a flow of fluid therethrough that is substantially opposite in direction to a flow of fluid through the second spiral channel.

18. A support according to claim 16 wherein the heat transfer plate comprises a copper plate and the pedestal comprises a stainless steel plate.

19. A support according to claim 16 wherein the spring loaded heat transfer plate comprises a set of springs resting on the pedestal with a compression ring positioned over the springs.

20. A support according to claim 19 further comprising a thermally conductive layer between the heat transfer plate and base plate.

21. A support according to claim 16 further comprising a gas tube mounted in the pedestal, the gas tube comprising a plurality of springs to press the gas tube into a gas coupler on the base plate.

29. A support according to claim 16 wherein the first and second plates are joined together with a brazed bond.

30. A support according to claim 16 wherein the first and second materials are different from each other.

31. A support according to claim 16 wherein the first material comprises copper and the second material comprises stainless steel.

22. An electrostatic chuck for attachment to a pedestal in a substrate processing chamber capable of processing a substrate in an energized process gas, the pedestal having a groove, the electrostatic chuck comprising:

(a) at least one electrode capable of being charged to energize the process gas;

(b) a dielectric covering the electrode;

(c) a frontside surface to receive a substrate;

(d) an annular flange;

(e) a backside surface comprising a central protrusion having orifices for receiving electrode terminal posts and a gas coupler;

(f) a first polished ring encircling the gas coupler; and

(g) a second polished ring that is radially outward from the first polished ring, wherein the first and second polished rings receive an O-ring which sits in the groove in the pedestal in the chamber.

23. A chuck according to claim 22 wherein the second polished ring is located at about the radial midpoint of the backside surface.

24. A chuck according to claim 23 wherein the second polished ring provides a seal around the heat transfer gas connections from the vacuum environment in the chamber.

25. A chuck according to claim 22 wherein backside surface comprises an annular trough surrounding a central protrusion comprising a D-shaped mesa.

26. A chuck according to claim 22 wherein the orifices are asymmetrically offset from one another by an angle of from about 115 to about 135°

.