Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated
First Claim
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1. A method of programming a memory device including a data storage material layer, the method comprising:
- applying a first electric pulse to the data storage material layer for a first period to reduce a resistance of the data storage material layer; and
applying a second electric pulse to the data storage material layer for a second period, longer than the first period, to increase the resistance of the data storage material layer.
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Abstract
A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to establish a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed.
31 Citations
5 Claims
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1. A method of programming a memory device including a data storage material layer, the method comprising:
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applying a first electric pulse to the data storage material layer for a first period to reduce a resistance of the data storage material layer; and applying a second electric pulse to the data storage material layer for a second period, longer than the first period, to increase the resistance of the data storage material layer. - View Dependent Claims (2, 3)
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4. A memory device comprising:
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a lower electrode on a substrate; an upper electrode on the lower electrode; and a data storage material layer between the lower electrode and the upper electrode configured to provide relatively low resistance responsive to a first electric pulse applied to the data storage material layer for a first period and to provide a relatively high resistance responsive to a second electric pulse applied to the data storage material layer for a second period, longer than the first period. - View Dependent Claims (5)
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Specification