Semiconductor device having variable parameter selection based on temperature and test method

• US 7,480,588 B1
• Filed: 02/20/2007
• Issued: 01/20/2009
• Est. Priority Date: 04/19/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Darryl Walker
• Inventors: Walker, Darryl
• Primary Examiner(s): Nghiem, Michael P.
• Assistant Examiner(s): KHUU, HIEN DIEU THI
• Application Number:
  US11/708,408
• Time in Patent Office: 700 Days
• Field of Search: 702/132
• US Class Current: 702/132
• CPC Class Codes: G01K 7/425 Thermal management of integrated systems

Abstract

A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, a word line low voltage, or the like. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without comprising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

Claims

1. A semiconductor device, comprising:

a first temperature sensing circuit including a first temperature threshold value and coupled to receive a first temperature select value, the first temperature sensing circuit providing a first temperature indication signal;

at least one first temperature select register that provides the first temperature select value; and

the at least one first temperature select register is coupled to receive a power up detect signal that sets the first temperature select value to a predetermined state.

2. The semiconductor device of claim 1, wherein:

the first temperature select value sets the first temperature threshold value.

3. The semiconductor device of claim 1, wherein:

the at least one first temperature select register is a plurality of first temperature select registers.

4. The semiconductor device of claim 1, wherein:

the at least first one temperature select register includes a first temperature latch circuit.

5. The semiconductor device of claim 1, wherein:

the first temperature select value is loaded into the at least one first temperature select register from external to the semiconductor device by a temperature select register load operation.

6. The semiconductor device of claim 5, further including:

the temperature select register load operation includes a register write command.

7. The semiconductor device of claim 5, wherein:

the temperature select register load operation includes providing a register address.

8. The semiconductor device of claim 5, wherein:

the temperature select register load operation includes providing the first temperature select value.

9. The semiconductor device of claim 1, wherein:

the at least one first temperature select register is coupled to receive a temperature select load signal and the first temperature select value is loaded into the at least one temperature select register in response to the temperature select load signal.

10. The semiconductor device of claim 1, further including:

the first temperature sensing circuit is coupled to receive a first hysteresis select value and includes a first temperature hysteresis value; and

at least one first hysteresis select register that provides the first hysteresis select value.

11. The semiconductor device of claim 10, further including:

the first hysteresis select value sets the first temperature hysteresis value.

12. The semiconductor device of claim 10, further including:

the at least one first hysteresis select register is a plurality of first temperature hysteresis registers.

13. The semiconductor device of claim 10, further including

the at least one first hysteresis select register includes a first hysteresis latch circuit.

14. The semiconductor device of claim 10, wherein:

the first hysteresis select value is loaded into the at least one first hysteresis select register from external to the semiconductor device by a hysteresis select register load operation.

15. The semiconductor device of claim 14, wherein:

the hysteresis select register load operation includes a register write command.

16. The semiconductor device of claim 14, wherein:

the hysteresis select register load operation includes providing a register address.

17. The semiconductor device of claim 14, wherein:

the hysteresis select register load operation includes providing the first hysteresis select value.

18. The semiconductor device of claim 10, wherein:

the at least one first hysteresis select register is coupled to receive a power up detect signal that sets the first hysteresis select value to a predetermined state.

19. The semiconductor device of claim 10, further including:

the at least one first hysteresis select register is coupled to receive a hysteresis select load signal and the first hysteresis select value is loaded into the at least one hysteresis select register in response to the hysteresis select load signal.

20. A semiconductor device, comprising:

a first temperature sensing circuit including a first temperature threshold value and coupled to receive a first temperature select value, the first temperature sensing circuit providing a first temperature indication signal;

at least one first temperature select register that provides the first temperature select value; and

the first temperature select value is loaded into the at least one first temperature select register from external to the semiconductor device by a temperature select register load operation.

21. The semiconductor device of claim 20, wherein:

the first temperature select value sets the first temperature threshold value.

22. The semiconductor device of claim 20, wherein:

the at least one first temperature select register is a plurality of first temperature select registers.

23. The semiconductor device of claim 20, wherein:

the at least first one temperature select register includes a first temperature latch circuit.

24. The semiconductor device of claim 20, further including:

the temperature select register load operation includes a register write command.

25. The semiconductor device of claim 20, wherein:

the temperature select register load operation includes providing a register address.

26. The semiconductor device of claim 20, wherein:

the temperature select register load operation includes providing the first temperature select value.

27. The semiconductor device of claim 20, wherein:

the at least one first temperature select register is coupled to receive a temperature select load signal and the first temperature select value is loaded into the at least one temperature select register in response to the temperature select load signal.

28. The semiconductor device of claim 20, further including:

the first temperature sensing circuit is coupled to receive a first hysteresis select value and includes a first temperature hysteresis value; and

at least one first hysteresis select resister that provides the first hysteresis select value.

29. The semiconductor device of claim 28, further including,

the first hysteresis select value sets the first temperature hysteresis value.

30. The semiconductor device of claim 28, further including:

the at least one first hysteresis select register is a plurality of first temperature hysteresis registers.

31. The semiconductor device of claim 28, further including:

the at least one first hysteresis select register includes a first hysteresis latch circuit.

32. The semiconductor device of claim 28, wherein:

the first hysteresis select value is loaded into the at least one first hysteresis select register from external to the semiconductor device by a hysteresis select register load operation.

33. The semiconductor device of claim 28, wherein:

the hysteresis select register load operation includes a register write command.

34. The semiconductor device of claim 28, wherein:

the hysteresis select register load operation includes providing a register address.

35. The semiconductor de vice of claim 28, wherein:

the hysteresis select register load operation includes providing the first hysteresis select value.

36. The semiconductor device of claim 28, wherein:

the at least one first hysteresis select register is coupled to receive a power up detect signal that sets the first hysteresis select value to a predetermined state.

37. The semiconductor device of claim 28, further including:

the at least one first hysteresis select register is coupled to receive a hysteresis select load signal and the first hysteresis select value is loaded into the at least one hysteresis select register in response to the hysteresis select load signal.

38. A semiconductor device, comprising:

a first temperature sensing circuit including a first temperature threshold value and coupled to receive a first temperature select value, the first temperature sensing circuit providing a first temperature indication signal;

at least one first temperature select register that provides the first temperature select value;

the first temperature sensing circuit is coupled to receive a first hysteresis select value and includes a first temperature hysteresis value; and

at least one first hysteresis select register that provides the first hysteresis select value.

39. The semiconductor device of claim 38, wherein:

the first temperature select value sets the first temperature threshold value.

40. The semiconductor device of claim 38, wherein:

the at least one first temperature select register is a plurality of first temperature select registers.

41. The semiconductor device of claim 38, wherein:

the at least first one temperature select register includes a first temperature latch circuit.

42. The semiconductor device of claim 38, further including;

the first temperature select value is loaded into the at least one first temperature select register from external to the semiconductor device by a temperature select register load operation; and

the temperature select register load operation includes a register write command.

43. The semiconductor device of claim 38, wherein:

the first temperature select value is loaded into the at least one first temperature select register from external to the semiconductor device by a temperature select register load operation; and

the temperature select register load operation further includes providing a register address.

44. The semiconductor device of claim 38, wherein:

the first temperature select value is loaded into the at least one first temperature select register from external to the semiconductor device by a temperature select register load operation; and

the temperature select register load operation includes providing the first temperature select value.

45. The semiconductor device of claim 38, wherein:

the at least one first temperature select register is coupled to receive a temperature select load signal and the first temperature select value is loaded into the at least one temperature select register in response to the temperature select load signal.

46. The semiconductor device of claim 38, further including:

the first hysteresis select value sets the first temperature hysteresis value.

47. The semiconductor device of claim 38, further including:

the at least one first hysteresis select register is a plurality of first temperature hysteresis registers.

48. The semiconductor device of claim 38, further including:

the at least one first hysteresis select register includes a first hysteresis latch circuit.

49. The semiconductor device of claim 38, wherein:

the first hysteresis select value is loaded into the at least one first hysteresis select register from external to the semiconductor device by a hysteresis select register load operation.

50. The semiconductor device of claim 49, wherein:

the hysteresis select register load operation includes a register write command.

51. The semiconductor device of claim 49, wherein:

the hysteresis select register load operation includes providing a register address.

52. The semiconductor device of claim 49, wherein:

the hysteresis select register load operation includes providing the first hysteresis select value.

53. The semiconductor device of claim 38, wherein:

the at least one first hysteresis select register is coupled to receive a power up detect signal that sets the first hysteresis select value to a predetermined state.

54. The semiconductor device of claim 38, further including:

the at least one first hysteresis select register is coupled to receive a hysteresis select load signal and the first hysteresis select value is loaded into the at least one hysteresis select register in response to the hysteresis select load signal.

55. A semiconductor device, comprising:

a first temperature sensing circuit including a first temperature threshold value and coupled to receive a first temperature select value, the first temperature sensing circuit providing a first temperature indication signal;

at least one first temperature select register that provides the first temperature select value; and

the at least one first temperature select register is coupled to receive a temperature select load signal and the first temperature select value is loaded into the at least one temperature select register in response to the temperature select load signal.

56. The semiconductor device of claim 55, wherein:

the first temperature select value sets the first temperature threshold value.

57. The semiconductor device of claim 55, wherein:

the at least one first temperature select register is a plurality of first temperature select registers.

58. The semiconductor device of claim 55, wherein:

the at least first one temperature select register includes a first temperature latch circuit.

59. The semiconductor device of claim 55, further including:

the temperature select register load operation includes a register write command.

60. The semiconductor device of claim 55, wherein:

the temperature select register load operation includes providing a register address.

61. The semiconductor device of claim 55, wherein:

the temperature select register load operation includes providing the first temperature select value.

62. The semiconductor device of claim 55, further including:

the first temperature sending circuit is coupled to receive a first hysteresis select value and includes a first temperature hysteresis value;

at least one first hysteresis select register that provides the first hysteresis select value; and

the first hysteresis select value sets the first temperature hysteresis value.

63. The semiconductor device of claim 55, further including:

the first temperature sensing circuit is coupled to receive a first hysteresis select value and includes a first temperature hysteresis value;

at least one first hysteresis select register that provides the first hysteresis select value; and

the at least one first hysteresis select register is a plurality of first temperature hysteresis registers.

64. The semiconductor device of claim 55, further including:

the first temperature sensing circuit is coupled to receive a first hysteresis select value and includes a first temperature hysteresis value;

at least one first hysteresis select register that provides the first hysteresis select value; and

the at least one first hysteresis select register includes a first hysteresis latch circuit.

65. The semiconductor device of claim 55, wherein:

the first temperature sensing circuit is coupled to receive a first hysteresis select value and includes a first temperature hysteresis value;

at least one first hysteresis select register that provides the first hysteresis select value; and

the first hysteresis select value is loaded into the at least one first hysteresis select register from external to the semiconductor device by a hysteresis select register load operation.

66. The semiconductor device of claim 65, wherein:

the hysteresis select register load operation includes a resister write command.

67. The semiconductor device of claim 65, wherein:

the hysteresis select register load operation includes providing a register address.

68. The semiconductor device of claim 65, wherein:

the hysteresis select register load operation includes providing the first hysteresis select value.

69. The semiconductor device of claim 55, wherein:

the first temperature sensing circuit is coupled to receive a first hysteresis select value and includes a first temperature hysteresis value;

at least one first hysteresis select register that provides the first hysteresis select value; and

the at least one first hysteresis select register is coupled to receive a power up detect signal that sets the first hysteresis select value to a predetermined state.

70. The semiconductor device of claim 55, further including:

the first temperature sensing circuit is coupled to receive a first hysteresis select value and includes a first temperature hysteresis value;

at least one first hysteresis select register that provides the first hysteresis select value; and

the at least one first hysteresis select register is coupled to receive a hysteresis select load signal and the first hysteresis select value is loaded into the at least one hysteresis select register in response to the hysteresis select load signal.