Multi-bit nonvolatile memory devices

• US 7,482,649 B2
• Filed: 01/19/2006
• Issued: 01/27/2009
• Est. Priority Date: 01/20/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Sung-Min, Yun, Eun-Jung
• Primary Examiner(s): Luu; Chuong A.
• Application Number:
  US11/335,390
• Publication Number:
  US 20060157753A1
• Time in Patent Office: 1,104 Days
• Field of Search: 438/576, 438/257, 257/374, 257/510, 257/484, 257/302, 257/288, 257/328, 257/396, 257/135, 257/136, 257/242, 257/329
• US Class Current: 257/302
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/7923 Programmable transistors with more than two possible different levels of programmation
• CPC Class Codes: H10B 43/30 characterised by the memory core region
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

Multi-bit nonvolatile memory devices and related methods of manufacturing the same are described. In some multi-bit nonvolatile memory devices, a semiconductor substrate has a recessed region defined therein. An insulating layer, which can include an ONO layer, is configured to store data within programming regions therein, and covers a sidewall and a lower surface of the recess region. A gate electrode is on the insulating layer in the recessed region. At least one pair of impurity regions are in the semiconductor substrate. The impurity regions adjoin a side surface of the insulating layer in the recess region and form a relative angle that is less than 120° therebetween with respect to a center of the gate electrode.

Claims

1. A multi-bit nonvolatile memory device comprising:

a semiconductor substrate in which a recessed region is defined;

an insulating layer configured to store data within programming regions therein, the insulating layer covering a sidewall and a lower surface of the recess region;

a gate electrode on the insulating layer in the recessed region; and

at least one pair of impurity regions in the semiconductor substrate, the impurity regions adjoining a side surface of the insulating layer in the recess region and forming a relative angle that is less than 120°

therebetween with respect to a center of the gate electrode, wherein multiple different bit values are selectively stored in different programming regions of the insulating layer around the gate electrode by selective application of voltage to different ones of the impurity regions adjoining the programming regions of the insulating layer to be programmed.

2. The device of claim 1, wherein the insulating layer comprises a first ONO layer.

3. The device of claim 1, wherein the relative angle is 90°

.

4. The device of claim 1, wherein the recess region has a cylindrical shape.

5. The device of claim 1, wherein the recess region has a polyhedral shape.

6. The device of claim 5, wherein the recess region has a cubic shape.

7. The device of claim 5, wherein corner areas of the cubic shaped recess region adjoin at least one pair of the impurity regions.

8. The device of claim 5, wherein the recess region between the at least one pair of impurity regions has a linear profile.

9. The device of claim 1, wherein the gate electrode protrudes away from an upper surface of the semiconductor substrate.

10. The device of claim 1, wherein an upper surface of the gate electrode is aligned with an adjacent major upper surface of the semiconductor substrate.

11. The device of claim 1, wherein the at least one pair of impurity regions comprise a first pair of impurity regions formed on a same side of the gate electrode with the gate electrode partially disposed therebetween.

12. The device of claim 11, wherein the at least one pair of impurity regions further comprise a second pair of impurity regions on an opposite side of the gate electrode from the first pair of impurity regions.

13. The device of claim 12, wherein each of the four impurity regions of the first and second pairs of impurity regions are part of a different one of four transistors.

14. The device of claim 12, wherein multiple different bit values are selectively stored in different programming regions of the insulating layer around the gate electrode by selective application of voltage to different ones of the four impurity regions of the first and second pairs of impurity regions adjoining the programming regions of the insulating layer to be programmed.

15. The device of claim 12, wherein the insulating layer comprises a dielectric film that comprises nano-crystal material and/or a dielectric film material with a plurality of charge traps.

16. A multi-bit nonvolatile memory device comprising:

a semiconductor substrate in which a plurality of recess regions are defined;

an insulating layer configured to store data within programming regions therein, the insulating layer covering sidewalls and lower surfaces of the plurality of recess regions;

a pair of gate electrode arrays each comprising gate electrodes on the insulating layer in the plurality of recess regions, wherein the gate electrodes of a first one of the pairs of gate electrode arrays are arranged along a first line and the gate electrodes of a second one of the pairs of gate electrode arrays are arranged along a second line that is parallel to the first line;

a plurality of impurity regions in the semiconductor substrate, the impurity regions arranged in the same direction as the gate electrodes of the pair of gate electrode arrays and adjoin side surfaces of the insulating layer in the recess regions; and

a pair of word lines, one of the pairs of word lines is electrically connected to gate electrodes of the first one of the pairs of gate electrode arrays and is not electrically connected to gate electrodes of the second one of the pairs of gate electrode arrays, and the other one of the pairs of word lines is electrically connected to gate electrodes of the second one of the pairs of gate electrode arrays and is not electrically connected to gate electrodes of the first one of the pairs of gate electrode arrays,

wherein the gate electrodes of the first one of the pairs of gate electrode arrays are spaced apart from the gate electrodes of the second one of the pairs of gate electrode arrays by a predetermined distance, and

wherein multiple different bit values are selectively stored in different programming regions of the insulating layer around each of the gate electrodes by selective application of voltage to different ones of the impurity regions adjoining the programming regions of the insulating layer to be programmed.

17. The device of claim 16, wherein the insulating layer comprises an ONO layer.

18. The device of claim 17, wherein multiple different bit values are selectively stored in different programming regions of the ONO layer around each of the gate electrodes by selective application of voltage to different ones of the impurity regions adjoining the programming regions of the insulating layer to be programmed.

19. The device of claim 16, wherein the plurality of impurity regions each adjoin opposite facing sides of a pair of gate electrodes and are each configured to store charge in a localized region of the adjoining one of the facing sides of the insulating layers on one of the gate electrodes, wherein one of the gate electrodes is in the first one of the pairs of gate electrode arrays and the other one of the gate electrodes is in the second one of the pairs of gate electrode arrays.

20. The device of claim 16, wherein the plurality of impurity regions comprise:

first impurity regions arranged in the same direction as a first one of the pairs of gate electrode arrays and adjoin a same side of gate electrodes of the first one of the pairs of gate electrode arrays, wherein two of the first impurity regions are configured to store charge in different first and second localized regions of the adjoining insulating layer on a first side of a first one of the gate electrodes;

second impurity regions spaced apart from the first impurity regions by a predetermined distance, and arranged in the same direction as the gate electrodes of the first one of the gate electrode arrays, and adjoin an opposite side of the gate electrodes of the first gate electrode arrays from the first impurity regions, wherein the second impurity regions are configured to store charge in different third and fourth localized regions of the adjoining insulating layer on a second side, which is opposite facing to the first side, of the first one of the gate electrodes; and

a pair of bit lines, one of the bit lines is electrically connected to gate electrodes of the first one of the pairs of gate electrode arrays and is not electrically connected to gate electrodes of the second one of the pairs of gate electrode arrays, and the other one of the bit lines is electrically connected to gate electrodes of the second one of the pairs of gate electrode arrays and is not electrically connected to gate electrodes of the first one of the pairs of gate electrode arrays.