MOSgated power semiconductor device with source field electrode
First Claim
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1. A power semiconductor device comprising:
- a semiconductor body having a common conduction region of one conductivity, and a base region of another conductivity, said semiconductor body including a first surface;
a trench extending from said first surface through said base region and into said common conduction region, said trench including at least two opposing sidewalls and a bottom;
a first gate insulation adjacent one of said sidewalls;
a first gate electrode adjacent said first gate insulation and spanning said base region;
a second gate insulation adjacent the other of said sidewalls;
a second gate electrode adjacent said second gate insulation and spanning said base region;
a source field electrode having a first portion and a second portion, said first portion of said source field electrode being disposed between said first and said second gate electrodes and insulated from the same by an insulation body, and said second portion of said source field electrode being disposed below said first portion and said gate electrodes;
a source region adjacent each sidewall of said trench; and
a source contact electrically connected to said source field electrode and said source regions, wherein said source field electrode extends out of said trench and above said first surface of said semiconductor body.
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Abstract
A power semiconductor device which includes a source field electrode, and at least one insulated gate electrode adjacent a respective side of the source field electrode, the source field electrode and the gate electrode being disposed in a common trench, and a method for fabricating the device.
18 Citations
19 Claims
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1. A power semiconductor device comprising:
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a semiconductor body having a common conduction region of one conductivity, and a base region of another conductivity, said semiconductor body including a first surface; a trench extending from said first surface through said base region and into said common conduction region, said trench including at least two opposing sidewalls and a bottom; a first gate insulation adjacent one of said sidewalls; a first gate electrode adjacent said first gate insulation and spanning said base region; a second gate insulation adjacent the other of said sidewalls; a second gate electrode adjacent said second gate insulation and spanning said base region; a source field electrode having a first portion and a second portion, said first portion of said source field electrode being disposed between said first and said second gate electrodes and insulated from the same by an insulation body, and said second portion of said source field electrode being disposed below said first portion and said gate electrodes; a source region adjacent each sidewall of said trench; and a source contact electrically connected to said source field electrode and said source regions, wherein said source field electrode extends out of said trench and above said first surface of said semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A MOSgated power semiconductor device comprising:
an active area including at least one active cell, said active cell including at least one source region, a source contact electrode connected to said source region, a source field electrode including a first portion of a first width and a second portion of a second width, the first width being less than the second width, the source field electrode being electrically connected to said source contact, and an insulated gate electrode adjacent one side of said source field electrode and a base region, said second portion of said source field electrode extending to a depth below a depth of said insulated gate electrode and said first portion of said source field electrode extending to a height above a height of said insulated gate electrode, wherein said source field electrode and said insulated gate electrode reside within a common trench. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
Specification