Method of forming trench gate FETs with reduced gate to drain charge

• US 7,485,532 B2
• Filed: 03/20/2008
• Issued: 02/03/2009
• Est. Priority Date: 04/26/2005
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Challa, Ashok, Marchant, Bruce D.
• Primary Examiner(s): Tran; Thien F
• Application Number:
  US12/052,135
• Publication Number:
  US 20080166846A1
• Time in Patent Office: 320 Days
• Field of Search: 438/206, 438/217, 438/259, 438/270, 438/271, 438/276, 438/289
• US Class Current: 438/259
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A method for forming a FET includes the following steps. Trenches are formed in a semiconductor region of a first conductivity type. A well region of a second conductivity type is formed in the semiconductor region. Source regions of the first conductivity type are formed in the well region such that channel regions defined by a spacing between the source regions and a bottom surface of the well region are formed in the well region along opposing sidewalls of the trenches. A gate dielectric layer having a non-uniform thickness is formed along the opposing sidewalls of the trenches such that a variation in thickness of the gate dielectric layer along at least a lower portion of the channel regions is: (i) substantially linear, and (ii) inversely dependent on a variation in doping concentration in the lower portion of the channel regions. A gate electrode is formed in each trench.

Claims

1. A method of forming a field effect transistor, comprising:

forming trenches in a semiconductor region of a first conductivity type;

forming a well region of a second conductivity type in the semiconductor region;

forming source regions of the first conductivity type in the well region such that channel regions defined by a spacing between the source regions and a bottom surface of the well region are formed in the well region along opposing sidewalls of the trenches;

forming a gate dielectric layer having a non-uniform thickness along the opposing sidewalls of the trenches such that a variation in thickness of the gate dielectric layer along at least a lower portion of the channel regions is;

(i) substantially linear, and (ii) inversely dependent on a variation in doping concentration in the lower portion of the channel regions; and

forming a gate electrode in each trench.

2. The method of claim 1 wherein the variation in thickness of the gate dielectric layer is such that a conduction channel is formed in each channel region when the field effect transistor is in the on state.

3. The method of claim 1 wherein the variation in thickness of the gate dielectric layer does not increase a threshold voltage of the field effect transistor.

4. The method of claim 1 wherein the gate dielectric layer forming step further comprises:

forming a first insulating layer along the opposing sidewalls of the trenches;

filling each trench with a fill material having a higher etch rate than the first insulating layer;

simultaneously etching the fill material and the first insulating layer such that;

(i) an upper portion of the first insulating layer is completely removed from along an upper portion of the opposing sidewalls of the trenches and a remaining lower portion of the first insulating layer has a tapered edge, and (ii) a portion of the fill material remains in each trench; and

forming a second insulating layer at least along upper portions of the opposing sidewalls of the trenches where the first insulating layer is completely removed.

5. The method of claim 4 wherein the fill material comprises a dielectric material.

6. The method of claim 1 wherein a doping concentration in the channel regions decreases from a maximum concentration in the direction from the source regions toward a bottom surface of the well region, and a thickness of the gate dielectric layer increases from a point below the maximum concentration in the direction from the source regions to the bottom surface of the well region.

7. The method of claim 1 wherein the semiconductor region includes an epitaxial layer of the first conductivity type extending over a substrate of the first conductivity type, the well region being formed in the epitaxial layer, and the trenches being formed so as to terminate below the bottom surface of the well region.

8. A method of forming a field effect transistor, comprising:

forming trenches in a semiconductor region of a first conductivity type;

forming a first insulating layer along opposing sidewalls of each trench;

filling each trench with a dielectric fill material having a higher etch rate than the first insulating layer;

simultaneously etching the dielectric fill material and the first insulating layer such that;

(i) an upper portion of the first insulating layer is completely removed from along an upper portion of the opposing sidewall of each trench and a remaining lower portion of the first insulating layer has a tapered edge, and (ii) a portion of the dielectric fill material remains in each trench; and

forming a second insulating layer at least along upper portions of the opposing sidewalls of each trench where the first insulating layer was completely removed.

9. The method of claim 8 further comprising:

forming a gate electrode in each trench over the remaining dielectric fill material;

forming a well region of a second conductivity type in the semiconductor region; and

forming source regions of the first conductivity type in the well region.

10. The method of claim 9 wherein channel regions defined by a spacing between the source regions and a bottom surface of the well region extends in the well region along opposing sidewalls of each trench, and the first and second insulating layers together form a gate dielectric having a non-uniform thickness such that a variation in thickness of the gate dielectric along at least a lower portion of the channel regions is inversely dependent on a variation in doping concentration in the at least a lower portion of the channel regions.

11. The method of claim 10 wherein a doping concentration in the channel regions decreases from a maximum concentration in the direction from the source regions toward a bottom surface of the well region, and a thickness of the gate dielectric layer increases from a point below the maximum concentration in the direction from the source regions to the bottom surface of the well region.

12. The method of claim 9 wherein channel regions defined by a spacing between the source regions and a bottom surface of the well region extends in the well region along opposing sidewalls of each trench, and the first and second insulating layers together form a gate dielectric such that a thickness of the gate dielectric linearly increases from a first thickness at a point along the channel regions to a second thickness at a point below a bottom surface of the well region.

13. The method of claim 9 wherein the semiconductor region includes an epitaxial layer of the first conductivity type extending over a substrate of the first conductivity type, the well region being formed in the epitaxial layer, and the trenches being formed so as to terminate below a bottom surface of the well region.

14. A method of forming a field effect transistor, comprising:

forming trenches in a semiconductor region of a first conductivity type;

forming a well region of a second conductivity type in the semiconductor region;

forming source regions of the first conductivity type in the well region such that channel regions defined by a spacing between the source regions and a bottom surface of the well region are formed in the well region along opposing sidewalls of the trenches, and a doping concentration in the channel regions decreases from a maximum concentration in the direction from the source regions toward a bottom surface of the well region;

forming a gate dielectric layer having a non-uniform thickness along the opposing sidewalls of the trenches such that a thickness of the gate dielectric layer increases in a substantially linear manner from a point below the maximum concentration in the direction from the source regions to the bottom surface of the well region; and

forming a gate electrode in each trench.

15. The method of claim 14 wherein a variation in thickness of the gate dielectric layer is such that a conduction channel is formed in each channel region when the field effect transistor is in the on state.

16. The method of claim 14 wherein a variation in thickness of the gate dielectric layer does not increase a threshold voltage of the field effect transistor.

17. The method of claim 14 wherein the gate dielectric layer forming step further comprises:

forming a first insulating layer along the opposing sidewalls of the trenches;

filling each trench with a fill material having a higher etch rate than the first insulating layer;

simultaneously etching the fill material and the first insulating layer such that;

(i) an upper portion of the first insulating layer is completely removed from along an upper portion of the opposing sidewalls of the trenches and a remaining lower portion of the first insulating layer has a tapered edge, and (ii) a portion of the fill material remains in each trench; and

forming a second insulating layer at least along upper portions of the opposing sidewalls of the trenches where the first insulating layer is completely removed.

18. The method of claim 17 wherein the fill material comprises a dielectric material.

19. The method of claim 17 wherein the semiconductor region includes an epitaxial layer of the first conductivity type extending over a substrate of the first conductivity type, the well region being formed in the epitaxial layer, and the trenches being formed so as to terminate below the bottom surface of the well region.