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Method of making an integrated circuit

  • US 7,485,571 B2
  • Filed: 09/19/2003
  • Issued: 02/03/2009
  • Est. Priority Date: 04/08/1992
  • Status: Expired due to Fees
First Claim
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1. A method of making an integrated circuit comprising:

  • providing a substrate having a principal surface;

    forming circuit devices at least one of under and on the principal surface; and

    forming a stress-controlled dielectric membrane overlying the circuit devices, wherein the stress-controlled dielectric membrane is capable of forming at least one of a flexible membrane, an elastic membrane, and a free standing membrane, the stress-controlled dielectric membrane comprising one or more stress-controlled dielectric layers that are caused to have a stress of about 8×

    108 dynes/cm2 or less.

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