Semiconductor device and method having capacitor and capacitor insulating film that includes preset metal element
First Claim
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1. A semiconductor device comprising:
- a first capacitor which includes;
a first capacitor insulating film at least including a first insulating film and a first ferroelectric film formed in contact with the first insulating film, the first ferroelectric film containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, andfirst and second capacitor electrodes formed to sandwich the first capacitor insulating film and formed of one of Cu and a material containing Cu as a main component,wherein the preset metal element contains at least one element selected from a group consisting of Mn, Nb, Zr, Cr, V, Y, Tc and Re, the constituent element contains O and at least one element selected from a group consisting of Si, C and F, and the first ferroelectric film contains a material selected from a group consisting of α
xOy, α
x SiyOz, α
xCyOz and α
xFyOz as a main component, α
indicating the preset metal element.
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Abstract
A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode.
35 Citations
15 Claims
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1. A semiconductor device comprising:
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a first capacitor which includes; a first capacitor insulating film at least including a first insulating film and a first ferroelectric film formed in contact with the first insulating film, the first ferroelectric film containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, and first and second capacitor electrodes formed to sandwich the first capacitor insulating film and formed of one of Cu and a material containing Cu as a main component, wherein the preset metal element contains at least one element selected from a group consisting of Mn, Nb, Zr, Cr, V, Y, Tc and Re, the constituent element contains O and at least one element selected from a group consisting of Si, C and F, and the first ferroelectric film contains a material selected from a group consisting of α
xOy, α
x SiyOz, α
xCyOz and α
xFyOz as a main component, α
indicating the preset metal element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a capacitor which includes; a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification