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ACCUFET with Schottky source contact

  • US 7,485,932 B2
  • Filed: 07/20/2005
  • Issued: 02/03/2009
  • Est. Priority Date: 07/20/2004
  • Status: Active Grant
First Claim
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1. An integrated MOSgated power semiconductor device comprising:

  • a drift region of one conductivity;

    a base region of said one conductivity above said drift region;

    a source region of said one conductivity above said base region;

    a first insulated gate adjacent said base region;

    a second insulated gate adjacent said base region;

    an insulated source field electrode adjacent said drift region and laterally adjacent said first and second insulated gates, said insulated source field electrode including a source field electrode; and

    a source contact making ohmic contact with said source region, said source field electrode, and Schottky contact with said base region;

    wherein said first insulated gate, said second insulated gate and said insulated source field electrode are disposed in a common trench.

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