3D IC method and device
First Claim
1. A structure, comprising:
- a first element having a first substrate, a first insulating layer disposed on said first substrate containing silicon and at least one of oxygen and nitrogen, and a first contact structure disposed in said first insulating layer;
a second element having a second substrate, a second insulating layer disposed on said second substrate containing silicon and at least one of oxygen and nitrogen, and a second contact structure disposed in said second insulating layer;
said first insulating layer directly bonded to said second insulating layer;
said first contact structure directly connected to said second contact structure; and
an interconnect structure disposed in a via and connected to said first contact structure.
5 Assignments
1 Petition
Accused Products
Abstract
A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface. Alternatively, first and/or second contact structures are not exposed at bonding, and a via is etched and filled after bonding to electrically interconnect first and second contact structures and provide electrical access to interconnected first and second contact structure to a surface. Also, a device may be formed in a first substrate, the device being disposed in a device region of the first substrate and having a first contact structure. A via may be etched, or etched and filled, through the device region and into the first substrate before bonding and the first substrate thinned to expose the via, or filled via after bonding.
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Citations
41 Claims
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1. A structure, comprising:
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a first element having a first substrate, a first insulating layer disposed on said first substrate containing silicon and at least one of oxygen and nitrogen, and a first contact structure disposed in said first insulating layer; a second element having a second substrate, a second insulating layer disposed on said second substrate containing silicon and at least one of oxygen and nitrogen, and a second contact structure disposed in said second insulating layer; said first insulating layer directly bonded to said second insulating layer; said first contact structure directly connected to said second contact structure; and an interconnect structure disposed in a via and connected to said first contact structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A structure, comprising:
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a first element having a first substrate, a first upper layer disposed on said first substrate comprising a first insulating region and a first conducting region; a second element having a second substrate, a second upper layer disposed on said second substrate comprising a second insulating region and a second conducting region; said first insulating region directly bonded to said second insulating region; said first conducting region directly connected to said second conducting region; and at least one of said first and second conducting regions comprises a thermally-expanded metal contact structure. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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Specification