Electrochemical fabrication methods including use of surface treatments to reduce overplating and/or planarization during formation of multi-layer three-dimensional structures

• US 7,488,686 B2
• Filed: 09/19/2006
• Issued: 02/10/2009
• Est. Priority Date: 05/07/2003
• Status: Expired due to Term

• Current Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Original Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Inventors: Smalley, Dennis R., Cohen, Adam L., Lockard, Michael S., Le, Qui T.
• Primary Examiner(s): Nhu; David
• Application Number:
  US11/523,206
• Publication Number:
  US 20070015367A1
• Time in Patent Office: 875 Days
• Field of Search: 438/680, 438/692, 438/697, 438/706, 438/712, 438/745
• US Class Current: 438/697
• CPC Class Codes: B33Y 10/00 Processes of additive manufacturing
• CPC Class Codes: C23C 18/1605 by masking
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: C25D 5/10 Electroplating with more than one layer of the same or of different metals for bearings C25D7/10
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/311 Etching the insulating layers by chemical or physical means H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288

Abstract

A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn'"'"'t readily accept deposits of electroplated or electroless deposited materials.

Claims

1. A method for forming at least a portion of a three-dimensional structure from a plurality of stacked and adhered layers, comprising:

forming a plurality of stacked and adhered layers to form the at least portion of the three-dimensional structure, wherein the formation of each layer comprises depositing and patterning a first conductive material, depositing a second conductive material, and planarizing the first and second conductive materials;

wherein the formation of at least one layer comprises;

(a) depositing and patterning a first conductive material on a substrate or previously formed layer to obtain a desired pattern having at least one protrusion of the first conductive material having a surface and at least one opening extending from the surface through a thickness of the first conductive material to the substrate or previously formed layer;

(b) treating the surface of the first conductive material to decrease susceptibility of the surface to receive a second conductive material which is to be deposited;

(c) depositing the second conductive material, such that deposition occurs with a higher selectivity to one or more regions defined by the at least one opening, wherein the higher selectivity results, at least in part, from the treating of the surface of the first conductive material;

(d) removing an effect of the treating of the surface of the first conductive material.

2. The method of claim 1 wherein the depositing and patterning of the first conductive material onto the substrate or previously formed layer comprises electroplating the first conductive material using a patterned dielectric adhered to the substrate or previously formed layer.

6. The method of claim 1 wherein the patterning of the first conductive material on the substrate or previously formed layer comprises:

(a) adhering a mask to the substrate or previously formed layer, wherein the mask has at least one opening through which the first conductive material may be deposited onto the substrate or previously formed layer; and

(b) electrodepositing the first conductive material onto the substrate or previously formed layer through the at least one opening.

7. The method of claim 1 additional comprising:

(a) planarizing the first conductive material and the second conductive material to a common level during the formation of at least some layers.

9. The method of claim 1 wherein the first conductive material deposited during the formation of at least one layer comprises a plurality of materials one deposited on another.

10. The method of claim 1 wherein the first conductive material deposited during the formation of at least one layer comprises a material on one layer and a different material on a different layer.

11. The method of claim 1 wherein the second conductive material deposited during the formation of at least one layer comprises a plurality of materials one deposited on another.

12. The method of claim 1 wherein the second conductive material deposited during the formation of at least one layer comprises a material on one layer and a different material on a different layer.

3. The method of claim I wherein the depositing and patterning of the first conductive material onto the substrate or previously formed layer comprises blanket depositing the first conductive material and then patterning the deposited first conductive material.

4. The method of claim 3 wherein the patterning of the first conductive material on the substrate or previously formed layer comprises selectively etching the first conductive material wherein selectivity of the etching is obtained using a patterned dielectric adhered to the substrate or previously formed layer.

5. The method of claim 4 wherein the treating of the surface comprises an operation, or set of operations, selected from the group consisting of

(a) stamping a solidifiable material against the surface to transfer the material to the surface, and then solidifying the solidifiable material on the surface to form a dielectric coating;

(b) applying at least one of a solid ifiable material or powder material to the surface using a roller to transfer the solidifiable material, and then solidifying and adhering the transferred solidifiable material on the surface to form a dielectric coating;

(c) applying and adhering a sheet of photoresist to the surface of the first conductive material, and then patterning the photoresist to leave at least .one opening through the photoresist in at least one location where the second conductive material is to be deposited;

(d) applying a coating of photoresist to the surface of the first conductive material, and then solidifying, patterning, and adhering the photoresist to leave at least one opening through the photoresist in at least one location were the second conductive material is to be deposited;

(e) applying and bonding a sheet of dielectric material to the surface of the first conductive material and applying at least one of gas pressure, liquid conveyed pressure or particulate conveyed pressure to the sheet to cause separation between those portions of the sheet supported by the first conductive material and those portions that are not supported;

(f) applying and solidifying a solidifiable material, supported by a support structure, to the first conductive material to form a dielectric coating; and

removing the support structure to leave the surface of the first conductive material covered by the dielectric coating whereby portions of the coating not in contact with the first conductive material remain adhered to the support structure during removal;

(g) adhering a patterned dielectric material to the surface of the first conductive material, wherein the patterned dielectric is supported by a support structure, and separating the support structure from the patterned dielectric;

(h) applying a solidifiable material to the surface of the first conductive material and to the substrate or previously formed layer exposed by the at least one opening, solidifying the solidifiable materiai to form a first solidified material, planarizing the solidified material to expose the first conductive material, selectively depositing a second solidifiable material onto the exposed first conductive material and then solidifying the second solidifiable material to form a second solidified material, and removing the first solidified material to expose the substrate or previously formed layer through the at least one opening in the first conductive material;

(i) applying a selected conductive material to the exposed surface of the first conductive material, wherein the selective conductive material does not readily accept deposits of at least some other conductive materials;

(j) a chemical treatment of the surface that converts the surface to a dielectric material; and

(k) a chemical treatment that oxidizes the exposed surface of the first conductive material.

8. The method of claim I wherein one of the first or second conductive materials is a structural material while the other of the first or second conductive materials is a sacrificial material, and wherein the method additionally comprises separating the sacrificial material from the structural material to release the at least portion of the three-dimensional structure.

13. A method for forming at least a portion of a three-dimensional structure from a plurality of stacked and adhered layers, comprising:

forming a plurality of stacked and adhered layers to form the at least portion of the three-dimensional structure, wherein the formation of each layer comprises depositing and patterning a first conductive material, depositing a second conductive material, and planarizing the first and second conductive materials;

wherein the formation of at least one layer comprises;

(a) depositing and patterning a first conductive material on a substrate or previously formed layer to obtain a desired pattern having at least one protrusion of the first conductive material having a surface and at least one opening extending from the surface through a thickness of the first conductive material to the substrate or previously formed layer;

(b) treating the surface of the first conductive material to decrease susceptibility of the surface to receive a second material which is to be deposited;

(c) depositing the second material, such that deposition occurs with a higher selectivity to one or more regions defined by the at least one opening, wherein the higher selectivity results, at least in part, from the treating of the surface of the first conductive material; and

(d) removing an effect of the treating of the surface of the first conductive material.

14. The method of claim 13 wherein the first conductive material comprises a plurality of materials one deposited on another.

15. The method of claim 13 wherein the first conductive material comprises a material on one layer and a different material on a different layer.

16. The method of claim 13 wherein the second material comprises a plurality of materials one deposited on another.

17. The method of claim 13 wherein the second material comprises a material on one layer and a different material on a different layer.

18. The method of claim 13 additional comprising planarizing the first conductive material and the second conductive material to a common level during the formation of at least some layers.

19. The method of claim 13 wherein one of the first or second conductive materials is a structural material while the other of the first or second conductive materials is a sacrificial material, and wherein the method additionally comprises separating the sacrificial material from the structural material to release the at least portion of the three-dimensional structure.

20. A method for forming at least a portion of a three-dimensional structure from a plurality of stacked and adhered layers, comprising:

forming a plurality of stacked and adhered layers to form the at least portion of the three-dimensional structure, wherein the formation of each layer comprises depositing and patterning a first conductive material, depositing a second conductive material, and planarizing the first and second conductive materials;

wherein the formation of at least one layer comprises;

(a) depositing and patterning a first conductive material on a substrate or previously formed layer to obtain a desired pattern having at least one protrusion of the first conductive material having a surface and at least one opening extending from the surface through a thickness of the first conductive material to the substrate or previously formed layer;

(b) treating the surface of the first conductive material to form a coating on the first conductive material;

(c) depositing the second material at least into the at least one opening; and

(d) removing the coating from the surface of the first conductive material along with any second material deposited thereon.

21. The method of claim 20 wherein the first conductive material comprises a plurality of materials one deposited on another.

22. The method of claim 20 wherein the first conductive material comprises a material on one layer and a different material on a different layer.

23. The method of claim 20 wherein the second material comprises a plurality of materials one deposited on another.

24. The method of claim 20 wherein the second material comprises a material on one layer and a different material on a different layer.

25. The method of claim 20 additional comprising planarizing the first conductive material and the second conductive material to a common level during the formation of at least some layers.

26. The method of claim 20 wherein one of the first or second conductive materials is a structural material while the other of the first or second conductive materials is a sacrificial material, and wherein the method additionally comprises separating the sacrificial material from the structural material to release the at least portion of the three-dimensional structure.