Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof
First Claim
1. A nitride semiconductor product comprising an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order,said light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer,wherein said barrier layers individually comprise a barrier sublayer C which has been grown at a temperature higher than a growth temperature of said well layer, and barrier sublayers A, B and E which have been grown at a temperature lower than a growth temperature of said barrier sublayer C, said barrier sublayers A, B, C, and E are stacked, in this order, said barrier sublayer A is grown by maintaining a temperature lower than a growth temperature of said barrier sublayer C, said barrier sublayer B is grown during elevating a temperature from the growth temperature of said barrier sublayer A to the growth temperature of said barrier sublayer C, the difference between the growth temperature of said barrier sublayer C and the growth temperature of said barrier sublayer E is 50°
- C. or more, said barrier sublayer E is grown by maintaining the lowered growth temperature after lowering the temperature.
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Accused Products
Abstract
A nitride semiconductor product including an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order, the light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer. Each barrier layer includes a barrier sublayer C which has been grown at a temperature higher than a growth temperature of the well layer, and a barrier sublayer E which has been grown at a temperature lower than a growth temperature of the barrier sublayer C. The barrier sublayer C is disposed closer to the substrate with respect to the barrier sublayer E.
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Citations
26 Claims
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1. A nitride semiconductor product comprising an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order,
said light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer, wherein said barrier layers individually comprise a barrier sublayer C which has been grown at a temperature higher than a growth temperature of said well layer, and barrier sublayers A, B and E which have been grown at a temperature lower than a growth temperature of said barrier sublayer C, said barrier sublayers A, B, C, and E are stacked, in this order, said barrier sublayer A is grown by maintaining a temperature lower than a growth temperature of said barrier sublayer C, said barrier sublayer B is grown during elevating a temperature from the growth temperature of said barrier sublayer A to the growth temperature of said barrier sublayer C, the difference between the growth temperature of said barrier sublayer C and the growth temperature of said barrier sublayer E is 50° - C. or more, said barrier sublayer E is grown by maintaining the lowered growth temperature after lowering the temperature.
- View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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2. A nitride semiconductor product comprising an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order,
said light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer, wherein said barrier layers individually comprise a barrier sublayer C which has been grown at a temperature higher than a growth temperature of said well layer, and barrier sublayers D and E which have been grown at a temperature lower than a growth temperature of said barrier sublayer C, said barrier sublayers C, D and E are stacked, in this order, the difference between the growth temperature of said barrier sublayer C and the growth temperature of said barrier sublayer E is 50° - C. or more, said barrier sublayer D is grown during lowering the temperature from the growth temperature of said barrier sublayer C to the growth temperature of said barrier sublayer E, and said barrier sublayer E is grown by maintaining the lowered growth temperature after lowering the temperature.
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19. A method for producing a nitride semiconductor product, said method comprising sequentially stacking on a substrate a nitride semiconductor n-type layer, a nitride semiconductor light-emitting layer of a quantum well structure, and a nitride semiconductor p-type layer, thereby producing a nitride semiconductor product having a quantum well structure, wherein said method comprises
growing a well layer; -
subsequently, elevating a growth temperature; growing a barrier layer of the quantum well structure at the elevated temperature, which is higher than a growth temperature of the well layer by 50°
C. or more;subsequently, lowering the growth temperature again by 50°
C. or more; andfurther growing the barrier layer at the lowered temperature. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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Specification