×

Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof

  • US 7,488,971 B2
  • Filed: 10/01/2004
  • Issued: 02/10/2009
  • Est. Priority Date: 10/02/2003
  • Status: Active Grant
First Claim
Patent Images

1. A nitride semiconductor product comprising an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order,said light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer,wherein said barrier layers individually comprise a barrier sublayer C which has been grown at a temperature higher than a growth temperature of said well layer, and barrier sublayers A, B and E which have been grown at a temperature lower than a growth temperature of said barrier sublayer C, said barrier sublayers A, B, C, and E are stacked, in this order, said barrier sublayer A is grown by maintaining a temperature lower than a growth temperature of said barrier sublayer C, said barrier sublayer B is grown during elevating a temperature from the growth temperature of said barrier sublayer A to the growth temperature of said barrier sublayer C, the difference between the growth temperature of said barrier sublayer C and the growth temperature of said barrier sublayer E is 50°

  • C. or more, said barrier sublayer E is grown by maintaining the lowered growth temperature after lowering the temperature.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×