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Thin film semiconductor device and fabrication method therefor

  • US 7,488,980 B2
  • Filed: 09/15/2004
  • Issued: 02/10/2009
  • Est. Priority Date: 09/18/2003
  • Status: Expired due to Fees
First Claim
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1. A thin film semiconductor device, comprising:

  • an insulator substrate including (i) a single-crystal thin film device having an active layer made of a single-crystal silicon, and (ii) a non-single-crystal silicon thin film device having an active layer made of a non-single-crystal silicon;

    a contact hole, anda relaying pad formed in a predetermined portion in an insulation layer of the single-crystal thin film device, in a region where the single-crystal thin film device is formed,the relaying pad being connected, via the contact hole, with metal wiring or its equivalent wiring which is connected with a predetermined position of a single-crystal layer of the single-crystal thin film device.

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