Semiconductor light emitting element, its manufacturing method and semiconductor light emitting device
First Claim
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1. A light emitting element comprising:
- a GaP substrate including;
a major surface inclined to the <
011>
direction from the {100} plane, the major surface being substantially flat;
a side surface covered with inequalities substantially; and
an opposite surface opposite to the major surface,a mesa portion provided on the major surface and having a light emitting multi-layer of InGaAlP based material;
a first electrode provided on the light emitting multi-layer; and
a second electrode provided on the opposite surface of the GaP substrate,whereina part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate,a width of the mesa portion is smaller than a width of the major surface of the GaP substrate in any cross-section,a part of the major surface of the GaP substrate is exposed without being covered with the mesa portion, andthe side surface of the GaP substrate includes;
a first tapered portion adjacent to the opposite surface of the GaP substrate, the first tapered portion being covered with the inequalities substantially; and
a second tapered portion adjacent to the major surface of the GaP substrate, the second tapered portion being covered with the inequalities substantially,the first tapered portion widening toward the major surface from the opposite surface,the second tapered portion narrowing toward the major surface from the first tapered portion, anda thickness of the first tapered portion being greater than a thickness of the second tapered portion.
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Abstract
A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.
28 Citations
20 Claims
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1. A light emitting element comprising:
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a GaP substrate including; a major surface inclined to the <
011>
direction from the {100} plane, the major surface being substantially flat;a side surface covered with inequalities substantially; and an opposite surface opposite to the major surface, a mesa portion provided on the major surface and having a light emitting multi-layer of InGaAlP based material; a first electrode provided on the light emitting multi-layer; and a second electrode provided on the opposite surface of the GaP substrate, wherein a part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate, a width of the mesa portion is smaller than a width of the major surface of the GaP substrate in any cross-section, a part of the major surface of the GaP substrate is exposed without being covered with the mesa portion, and the side surface of the GaP substrate includes; a first tapered portion adjacent to the opposite surface of the GaP substrate, the first tapered portion being covered with the inequalities substantially; and a second tapered portion adjacent to the major surface of the GaP substrate, the second tapered portion being covered with the inequalities substantially, the first tapered portion widening toward the major surface from the opposite surface, the second tapered portion narrowing toward the major surface from the first tapered portion, and a thickness of the first tapered portion being greater than a thickness of the second tapered portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A light emitting device comprising:
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a mounting part; a light emitting element mounted on the mounting part; the light emitting element having; a GaP substrate including; a major surface inclined to the <
011>
direction from the {100} plane, the major surface being substantially flat;a side surface covered with inequalities substantially; and an opposite surface opposite to the major surface; a mesa portion provided on the major surface and having a light emitting multi-layer of InGaAlP based material, a part of the major surface of the GaP substrate is exposed without being covered with the mesa portion; a first electrode provided on the light emitting multi-layer; and a second electrode provided on the opposite surface of the GaP substrate, wherein a part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate, a width of the mesa portion is smaller than a width of the major surface of the GaP substrate in any cross-section, and the side surface of the GaP substrate includes; a first tapered portion adjacent to the opposite surface of the GaP substrate, the first tapered portion being covered with the inequalities substantially; and a second tapered portion adjacent to the major surface of the GaP substrate the second tapered portion being covered with the inequalities substantially, the first tapered portion widening toward the major surface from the opposite surface, the second tapered portion narrowing toward the major surface from the first tapered portion, and a thickness of the first tapered portion being greater than a thickness of the second tapered portion, and the GaP substrate is provided closer to the mounting part and the mesa portion is provided remoter from the mounting part. - View Dependent Claims (17, 18, 19, 20)
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Specification
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsKonno, Kuniaki, Fujiwara, Akihiro, Nitta, Koichi, Nakamura, Takafumi, Sugawara, Yasuharu
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Primary Examiner(s)Weiss; Howard
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Assistant Examiner(s)Ingham; John C
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Application NumberUS10/863,269Publication NumberTime in Patent Office1,707 DaysField of Search257E33056-E33059, 257/E33.067, 257/E33.068, 257/95, 257/97, 257/102, 257/E33.003, 257/E33.074US Class Current257/95CPC Class CodesH01L 2224/45144 Gold (Au) as principal cons...H01L 2224/48091 ArchedH01L 2224/48247 connecting the wire to a bo...H01L 2224/48472 the other connecting portio...H01L 2924/00 Indexing scheme for arrange...H01L 2924/00014 the subject-matter covered ...H01L 2924/1815 ShapeH01L 2924/3025 Electromagnetic shieldingH01L 33/16 with a particular crystal s...H01L 33/20 with a particular shape, e....H01L 33/22 Roughened surfaces, e.g. at...H01L 33/30 containing only elements of...
