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Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics

  • US 7,489,011 B2
  • Filed: 11/12/2005
  • Issued: 02/10/2009
  • Est. Priority Date: 02/02/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising a semiconductor substrate, the semiconductor substrate comprising:

  • a body region of a first conductivity type, a top electrode being in electric contact with a top surface of the substrate and with the body region, a bottom electrode being in electrical contact with a bottom surface of the substrate; and

    a plurality of field shield regions of a second conductivity type, each of the field shield regions being laterally bounded by dielectric sidewalls, the dielectric sidewalls of each field shield region separating the field shield region from the body region, each field shield region being bounded from below by a PN junction with the body region, each of the field shield regions being in electrical contact with a field shield electrode;

    wherein the electrical contact between the field shield electrode and each of the field shield regions is ohmic.

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