TMOS-infrared uncooled sensor and focal plane array

• US 7,489,024 B2
• Filed: 02/15/2004
• Issued: 02/10/2009
• Est. Priority Date: 02/20/2003
• Status: Active Grant

• Current Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION, LTD.
• Original Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION, LTD.
• Inventors: Nemirovsky, Yael, Bochobza-Degani, Oflr, Socher, Eran
• Primary Examiner(s): Le; Thao X
• Assistant Examiner(s): Ullah; Elias
• Application Number:
  US10/545,892
• Publication Number:
  US 20060244067A1
• Time in Patent Office: 1,822 Days
• Field of Search: 257/675, 257/706, 257/720, 257/E31.122, 438/122
• US Class Current: 257/675
• CPC Class Codes: B81B 2201/042 Micromirrors, not used as optical switches
• CPC Class Codes: B81B 2203/058 Rotation out of a plane parallel to the substrate
• CPC Class Codes: B81B 3/0062 Devices moving in two or more dimensions, i.e. having special features which allow movement in more than one dimension
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: G01J 2005/0077 Imaging
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/14669 Infrared imagers
• CPC Class Codes: H02N 1/006 of the gap-closing type H02N1/004 takes precedence

Abstract

An array of uncooled infrared sensors based on a micro-machined temperature sensitive MOS transistor. The sensor array is fabricated using a commercial CMOS process on SOI wafers, followed by backside silicon dry etching for each sensor pixel. Active sensor pixels may include either, an integrator and buffer, or simply the sensing transistor, serving also as the selection device. The transistor bias controls the selected device and the sensitivity of the sensor. PMOS transistors and switched operation are used for noise minimization.

Claims

1. An infrared uncooled sensor and focal plane array (FPA) device able to provide improved cost, yield and performance by full use of Complementary Metal Oxide Semiconductor (CMOS) components, the device comprising:

a silicon-on-insulator (SOI) bulk selectively micromachined to achieve thermal isolation;

at least one element of thermally isolated Metal Oxide Semiconductor (TMOS) transistors with temperature dependent electrical parameters;

electrical and thermal conductors independently connecting said transistors to said single crystal silicon bulk;

a thin layer for the absorption of infrared radiation; and

a CMOS chip with readout circuits for sensor signal multiplexing, amplification and processing,

wherein said TMOS transistors and said electrical conductors are covered with layers and structures that absorb infrared radiation and thus respond with temperature changes that are transduced into a meaningful electrical signal by said transistors and said supporting electronic circuits.

2. The device according to claim 1, said SOI bulk further comprising:

a single crystal silicon bulk;

a thin device silicon layer; and

a buried thin silicon dioxide layer to provide said thermal insulation between said single crystal silicon bulk and said thin device silicon layer.

3. The device according to claim 1, further comprising:

electrical and thermal conductors independently connecting said transistors to said single crystal silicon bulk.

4. The device according to claim 1, wherein said transistors are operated by said CMOS chip circuits in a regime with maximal temperature sensitivity of electrical properties comprising at least one of the following:

drain current;

threshold voltage;

gain; and

local Fermi level,

and wherein noise is designed to be minimal, and wherein said transistors are thermally isolated from said single crystal silicon bulk by a selective etching process of the silicon bulk and said thin layers are electrically connected to said CMOS circuits on said CMOS chip in areas above said single crystal silicon bulk.

5. The device according to claim 1, wherein said at least one element is in the form of array of a plurality of elements.

6. The device according to claim 1, wherein said thin layer for the absorption of infrared radiation is in the form of a structure.

7. The device according to claim 1, wherein the infrared uncooled sensor is an infrared uncooled sensor pixel.

8. The device according to claim 7, wherein said thermal isolation is achieved by backside deep reactive ion etching of said silicon bulk under each sensor pixel.

9. The device according to claim 8, wherein said transistor is placed in the point of maximal thermal resistance with respect to said silicon bulk.

10. The device according to claim 8, wherein said transistor is a PMOS transistor.

11. The device according to claim 8, wherein said transistor is operated under subthreshold conditions and maximal temperature current sensitivity.

12. The device according to claim 8, wherein said thermal conductors are structured in a spiral or serpentine structure.

13. The device according to claim 8, wherein said transistor serves as both the sensing element and the pixel selection element.

14. The device according to claim 8, wherein said transistor gate bias is pulsed to decrease 1/f noise.

15. The device according to claim 8, wherein said transistor gate bias is unique to each pixel to reduce non-uniformity.

16. The device according to claim 8, wherein differential current integration is performed at the pixel level for frame time duration.

17. The device according to claim 1, wherein said buried silicon dioxide layer serves as an etch-stop layer for said silicon bulk etching process.

18. The device according to claim 1, wherein said CMOS chip contains low noise signal processing circuits for said sensor array readout.

19. The device according to claim 1, wherein said temperature sensitivity of said transistor drain current is used to detect said temperature changes.

20. The device according to claim 1, wherein said temperature sensitivity of said Fermi energy in the transistor inversion layer of said transistor is used to detect temperature changes.

21. The device according to claim 20, wherein the said transistor source is placed on the thermal bath.

22. The device according to claim 20, wherein the said transistor drain is placed on the point of maximal thermal resistance with respect to the silicon bulk.

23. The device according to claim 20, wherein voltage difference between the said transistor source and drain is used to sense the temperature difference between the sensor and the thermal bath.

24. The device according to claim 20, wherein said transistor serves as both the sensing element and the pixel selection element.

25. The device according to claim 20, wherein said transistor gate bias is pulsed to modulate the sensor voltage output.

26. The device according to claim 20, wherein said transistor gate bias is unique to each pixel to reduce non-uniformity.

27. The device according to claim 20, wherein an NMOS transistor and a PMOS transistor are connected in series to double the signal.

28. The device according to claim 1, wherein said temperature sensitivity of said transistor gain is used to detect said temperature changes.

29. The device according to claim 1, wherein said temperature sensitive element can be used to detect chemical reactions that emit or absorb heat.

30. The device according to claim 1, wherein the device can be modified for mechanical sensing of vibrations and motion.

31. The device according to claim 1, wherein the device can be optimized to control at least one process parameters from the following group:

silicon thickness;

doping; and

metal and polysilicon thickness.

32. The device according to claim 1, further comprising readout circuits for the device.

33. The device according to claim 1, wherein the device can be improved by introducing compensation schemes.

34. A method for an infrared uncooled sensor and focal plane array (FPA) device able to provide improved cost, yield and performance by full use of Complementary Metal Oxide Semiconductor (CMOS) components, the method comprising:

providing a silicon-on-insulator bulk selectively micromachined to achieve thermal isolation comprising the steps of;

providing a single crystal silicon bulk;

providing a thin device silicon layer; and

providing a buried thin silicon dioxide layer to provide said thermal insulation between said single crystal silicon bulk and said thin device silicon layer;

providing at least one element of thermally isolated Metal Oxide Semiconductor (TMOS) transistors with temperature dependent electrical parameters;

providing electrical and thermal conductors independently connecting said transistors to said single crystal silicon bulk;

providing a thin layer for the absorption of infrared radiation; and

providing a CMOS chip with readout circuits for sensor signal multiplexing, amplification and processing,

wherein said transistors are operated by said CMOS chip circuits In a regime with maximal temperature sensitivity of electrical properties comprising at least one of the following;

drain current;

threshold voltage;

gain; and

local Fermi level,

and wherein noise is designed to be minimal, and wherein said transistors are thermally isolated from said single crystal silicon bulk by a selective etching process of the silicon bulk and said thin layers and electrically connected to said CMOS circuits on said CMOS chip in areas above said single crystal silicon bulk, and wherein said TMOS transistors and said electrical conductors are covered with layers and structures that absorb infrared radiation and thus respond with temperature changes to radiation changes that are transduced into a meaningful electrical signal by said transistors and said supporting electronic circuits,

such that the method is able to provide improved cost, yield and performance.