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Multi-port memory devices

  • US 7,489,164 B2
  • Filed: 11/19/2007
  • Issued: 02/10/2009
  • Est. Priority Date: 05/17/2004
  • Status: Active Grant
First Claim
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1. A semiconductor storage device, comprising:

  • a storage element to store a data state coupled to ground and a first supply voltage;

    an isolation circuit coupled to the storage element comprising an output derived by the stored data state, the isolation circuit further coupled to ground and a second supply voltage lower than the first supply voltage;

    a first access device coupled to the storage element and further coupled to a first access circuit to read or alter the stored data state at ground or the first supply voltage;

    a second access device coupled to the output and further coupled to a second access circuit to read the output state at ground or the second supply voltage, wherein the isolation circuit prevents the second access circuit from altering the stored data state.

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