Method for making a semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer
First Claim
1. A method for making a semiconductor device comprising:
- forming an insulating layer on a substrate;
forming a semiconductor layer on the insulating layer on a side thereof opposite the substrate; and
forming a superlattice on the semiconductor layer on a side thereof opposite the insulating layer;
the superlattice comprising a plurality of stacked groups of layers with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon, and with the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent base semiconductor portions.
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Accused Products
Abstract
A method for making a semiconductor device may include forming an insulating layer on a substrate, and forming a semiconductor layer on the insulating layer on a side thereof opposite the substrate. The method may further include forming a superlattice on the semiconductor layer on a side thereof opposite the insulating layer. The superlattice may include a plurality of stacked groups of layers, with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. Moreover, the at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions.
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Citations
21 Claims
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1. A method for making a semiconductor device comprising:
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forming an insulating layer on a substrate; forming a semiconductor layer on the insulating layer on a side thereof opposite the substrate; and forming a superlattice on the semiconductor layer on a side thereof opposite the insulating layer; the superlattice comprising a plurality of stacked groups of layers with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon, and with the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent base semiconductor portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for making a semiconductor device comprising:
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forming an insulating layer on a substrate; forming a semiconductor layer on the insulating layer on a side thereof opposite the substrate, the semiconductor layer having a thickness of less than about 10 nm; and forming a superlattice on the semiconductor layer on a side thereof opposite the insulating layer; the superlattice comprising a plurality of stacked groups of layers with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon, and with the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent base semiconductor portions; the semiconductor layer and the base semiconductor monolayers each comprising a same semiconductor material. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification