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Method of making a semiconductor structure

  • US 7,491,623 B2
  • Filed: 08/20/2007
  • Issued: 02/17/2009
  • Est. Priority Date: 08/30/2006
  • Status: Active Grant
First Claim
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1. A method for manufacturing a device, comprising:

  • forming a layer on a substrate;

    forming a gate on the layer;

    forming an undercut under the gate by removing portions of the layer;

    forming a barrier layer within the undercut completely filling the undercut to protect the layer from corrosion during subsequent processing steps; and

    processing source and drain regions,wherein the layer is an oxide layer, andthe barrier layer forms sidewalls abutting the gate which are of thickness of less than 10 nm.

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