Two-wavelength image sensor picking up both visible and infrared images

• US 7,491,937 B2
• Filed: 04/02/2007
• Issued: 02/17/2009
• Est. Priority Date: 06/13/2006
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Nakanishi, Junji, Takamuro, Daisuke
• Primary Examiner(s): Porta; David P
• Assistant Examiner(s): Kim; Kiho
• Application Number:
  US11/695,302
• Publication Number:
  US 20070284532A1
• Time in Patent Office: 687 Days
• Field of Search: 250/332, 358/44
• US Class Current: 250/332
• CPC Class Codes: G01J 2005/0077 Imaging
• CPC Class Codes: G01J 2005/204 prepared by semiconductor processing, e.g. VLSI
• CPC Class Codes: G01J 3/2803 using photoelectric array detector
• CPC Class Codes: G01J 3/36 Investigating two or more bands of a spectrum by separate detectors
• CPC Class Codes: G01J 5/22 Electrical features thereof
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H04N 23/11 for generating image signals from visible and infrared light wavelengths
• CPC Class Codes: H04N 23/23 from thermal infrared radiation
• CPC Class Codes: H04N 25/46 by combining or binning pixels
• CPC Class Codes: H04N 25/767 Horizontal readout lines, multiplexers or registers
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

A 2-wavelength image sensor has a plurality of uniformly dispersedly arranged visible radiation detectors and a plurality of uniformly dispersedly arranged, uncooled infrared radiation detectors, and a single visible radiation detector configures a visible radiation detecting pixel and four series connected infrared radiation detectors configure a thermal infrared radiation detecting pixel. Consequently a visible image can be four times a thermal image in resolution. Furthermore for an infrared image an area increased four times per pixel to receive light can be achieved. As a result the infrared image can be enhanced in temperature resolution.

Claims

1. A 2-wavelength image sensor picking up both a visible image and an infrared image, comprising a detector array including a plurality of visible radiation detectors and a plurality of uncooled infrared radiation detectors, said plurality of visible radiation detectors and said plurality of uncooled infrared radiation detectors being uniformly dispersedly arranged, wherein:

each of said visible radiation detectors configures a single pixel of said visible image; and

said plurality of uncooled infrared radiation detectors are divided into groups of N of said uncooled infrared radiation detectors, N being an integer of at least two, each of said groups having said N of said uncooled infrared radiation detectors electrically series connected to configure a single pixel of said infrared image.

2. The 2-wavelength image sensor according to claim 1, wherein each of said uncooled infrared radiation detectors employs an SOI diode.

3. The 2-wavelength image sensor according to claim 2, wherein:

each of said uncooled infrared radiation detectors includes series connected one or at least two SOI diodes; and

each of said groups has said N of said uncooled infrared radiation detectors with a centered uncooled infrared radiation detector having a larger number of SOI diodes than that of SOI diode of another one of said N of said uncooled infrared radiation detectors of said each of said groups.

4. The 2-wavelength image sensor according to claim 1, wherein each of said uncooled infrared radiation detectors employs a bolometer.

5. The 2-wavelength image sensor according to claim 4, wherein:

each of said uncooled infrared radiation detectors includes a bolometer; and

each of said groups has said N of said uncooled infrared radiation detectors with a centered uncooled infrared radiation detector including said bolometer having a larger value in resistance than that of said bolometer of another one of said N of said uncooled infrared radiation detectors of said each of said groups.

6. The 2-wavelength image sensor according to claim 1, wherein:

each of said uncooled infrared radiation detectors includes an infrared radiation absorbing umbrella structure; and

each of said groups has said N of said uncooled infrared radiation detectors with their respective infrared radiation absorbing umbrella structures thermally coupled together.

7. The 2-wavelength image sensor according to claim 1, wherein:

each of said uncooled infrared radiation detectors includes an infrared radiation absorbing umbrella structure;

each said infrared radiation absorbing umbrella structure is thermally independent from another infrared radiation absorbing umbrella structure; and

each of said groups has said N of said uncooled infrared radiation detectors with a centered uncooled infrared radiation detector including said infrared radiation absorbing umbrella structure larger in area than said infrared radiation absorbing umbrella structure of another one of said N of said uncooled infrared radiation detectors of said each of said groups.

8. A 2-wavelength image sensor picking up both a visible image and an infrared image, comprising:

a detector array including a plurality of visible radiation detectors and a plurality of uncooled infrared radiation detectors, said plurality of visible radiation detectors and said plurality of uncooled infrared radiation detectors being uniformly dispersedly arranged, wherein

each of said visible radiation detectors configures a single pixel of said visible image,

said plurality of uncooled infrared radiation detectors are divided into groups of 2N of said uncooled infrared radiation detectors, N being an integer of at least two, each of said groups configuring a single pixel of said infrared image, and

each of said groups has said 2N of said uncooled infrared radiation detectors divided into first and second subgroups each formed of N of said 2N of said uncooled infrared radiation detectors, said first subgroup having said N of said 2N of said uncooled infrared radiation detectors series connected to configure an infrared radiation detection unit, said second subgroup having said N of said 2N of said uncooled infrared radiation detectors series connected to configure a substrate temperature detection unit, said uncooled infrared radiation detectors of said first subgroup detecting infrared radiation with higher sensitivity than said uncooled infrared radiation detectors of said second subgroup; and

a subtraction circuit subtracting a level of a signal output from said substrate temperature detection unit from that of a signal output from said infrared radiation detection unit to generate a signal output from a pixel corresponding thereto.

9. The 2-wavelength image sensor according to claim 8, wherein said uncooled infrared radiation detectors of said first subgroup have a hollow, thermal insulation structure and said uncooled infrared radiation detectors of said second subgroup do not have a hollow, thermal insulation structure to allow said uncooled infrared radiation detectors of said first subgroup to detect infrared radiation with higher sensitivity than said uncooled infrared radiation detectors of said second subgroup.

10. The 2-wavelength image sensor according to claim 8, wherein each of said uncooled infrared radiation detectors has a hollow, thermal insulation structure and said uncooled infrared radiation detectors of said first subgroup have a supporting leg smaller in thermal conductance than that of said uncooled infrared radiation detectors of said second subgroup to allow said uncooled infrared radiation detectors of said first subgroup to detect infrared radiation with higher sensitivity than said uncooled infrared radiation detectors of said second subgroup.