Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
First Claim
Patent Images
1. A photoelectric conversion device comprising:
- a first electrode over a substrate;
a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film;
an insulating film covering the first electrode and the photoelectric conversion layer;
a second electrode over the insulating film, and in contact with a part of the firstelectrode; and
a third electrode over the insulating film, and in contact with a part of the third semiconductor film,wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, andwherein the second electrode and the third electrode comprise the same material, and are formed in the same layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.
29 Citations
23 Claims
-
1. A photoelectric conversion device comprising:
-
a first electrode over a substrate; a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film; an insulating film covering the first electrode and the photoelectric conversion layer; a second electrode over the insulating film, and in contact with a part of the firstelectrode; and a third electrode over the insulating film, and in contact with a part of the third semiconductor film, wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, and wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A photoelectric conversion device comprising:
-
a first electrode over a substrate; a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film; an insulating film covering the first electrode and the photoelectric conversion layer; a second electrode over the insulating film, and in contact with a part of the first electrode; and a third electrode over the insulating film, and in contact with a part of the third semiconductor film, wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, wherein a width of the photoelectric conversion layer is larger than a width of the part of the first electrode, and wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. - View Dependent Claims (7, 8, 9, 10)
-
-
11. A photoelectric conversion device comprising:
-
a first electrode over a substrate; a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film; an insulating film covering the first electrode and the photoelectric conversion layer; a second electrode over the insulating film, and in contact with a part of the first electrode; and a third electrode over the insulating film, and in contact with a part of the third semiconductor film, wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, wherein a width of the photoelectric conversion layer is larger than a width of the part of the third semiconductor film, and wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. - View Dependent Claims (12, 13, 14, 15)
-
-
16. A photoelectric conversion device comprising:
-
a first electrode over a substrate; a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film over the first electrode; an insulating film covering the first electrode and the photoelectric conversion layer; a second electrode over the insulating film, and in contact with a part of the first electrode; and a third electrode over the insulating film, and in contact with a part of the third semiconductor film, wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, wherein the third electrode does not overlap with the first electrode through the photoelectric conversion layer between the first electrode and the third electrode, and wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. - View Dependent Claims (17, 18, 19, 20)
-
-
21. A photoelectric conversion device comprising:
-
a first electrode over an insulating surface; a photoelectric conversion layer comprising a first semiconductor film having one conductivity type, a second semiconductor film, and a third semiconductor film having an inverse conductivity type to the conductivity type of the first semiconductor film over the first electrode; an insulating film covering the first electrode and the photoelectric conversion layer; a second electrode over the insulating film, and in contact with a part of the first electrode; and a third electrode over the insulating film, and in contact with a part of the third semiconductor film, wherein the photoelectric conversion layer overlaps and contacts with a part of the first electrode, wherein the photoelectric conversion layer is in contact with the insulating surface, and wherein the second electrode and the third electrode comprise the same material, and are formed in the same layer. - View Dependent Claims (22, 23)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsNishi, Kazuo, Arao, Tatsuya, Sugawara, Yuusuke, Takahashi, Hironobu
-
Primary Examiner(s)Elms; Richard
-
Assistant Examiner(s)BERNSTEIN, ALLISON
-
Application NumberUS11/276,036Publication NumberTime in Patent Office1,103 DaysField of Search257/428, 257/431, 257/458, 257/E33.046, 257/E31.061, 257/E31.124, 257/E31.126US Class Current257/458CPC Class CodesH01L 27/14603 Special geometry or disposi...H01L 27/14643 Photodiode arrays; MOS imagersH01L 27/14687 Wafer level processingH01L 31/1133 the device being a conducto...
