Mask defect analysis system

• US 7,492,941 B2
• Filed: 06/27/2007
• Issued: 02/17/2009
• Est. Priority Date: 02/21/2002
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Bruce, James A., Conrad, Edward W., Bula, Orest, Krueger, Joshua J., Hibbs, Michael S., Leipold, William C.
• Primary Examiner(s): Bella; Matthew C
• Assistant Examiner(s): Strege; John B
• Application Number:
  US11/769,431
• Publication Number:
  US 20070248257A1
• Time in Patent Office: 601 Days
• Field of Search: 382/144, 382/141, 382/145, 382/149, 348/87, 348/125
• US Class Current: 382/144
• CPC Class Codes: G03F 1/84 Inspecting

Abstract

An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.

Claims

1. A method for evaluating the effect of defects on masks in a semiconductor manufacturing process, said method comprising the steps of:

identifying critical portions of a mask;

inspecting the mask for defects;

analyzing locations of the defects to classify said defects into critical defects and non-critical defects;

performing dimension measurements restrictedly on the critical portions and routing the masks with the critical portions for repair or scrapping to speed up the dimension measurements;

determining a final disposition of the mask by applying different acceptance rules to the critical defects and the non-critical defects; and

incorporating feedback from the final disposition into a macro, which is applicable to other masks.

2. The method of claim 1, wherein the defects located within the critical portions are classified as the critical defects, and the defects located outside of the critical portions are classified as the non-critical defects.

3. The method of claim 2, wherein the acceptance rules comprises a standard acceptance rule applied to said critical defect and a loose acceptance rule applied to said non-critical defects.

4. The method of claim 3, wherein said final disposition of the mask is selected from accepting, repairing or scrapping the mask.

5. The method of claim 4, wherein the mask is used for a semiconductor manufacturing process.

21. The method of claim 3, wherein the loose acceptance rule is configured to identify regions of a circuit layout that are used when re-inspecting a repaired mask.

6. The system for evaluating the effect of defects in masks in a semiconductor manufacturing process, said system comprising:

an inspection tool for locating defects in a mask; and

a computer system for performing dimension measurements restrictedly on critical portions of the mask and routing the masks with the critical portions to be repaired or scrapped to speed up the dimension measurements, incorporating feedback from the final disposition into a macro, which is applicable to other masks, and classifying said defects into critical defects and non-critical defects based on locations of said defects and critical portions of said mask, wherein the computer systems determines the final disposition of the mask by applying different acceptance rules to the critical defects and the non-critical defects.

7. The system of claim 6, wherein said computer system classifies the defects located within said critical portions as the critical defects and the defects located outside of said critical portions as the non-critical defects.

8. The system of claim 7, the acceptance rules comprising a standard acceptance rule and a loose acceptance rule, wherein the computer system applies the standard acceptance rule to said critical defects and the loose acceptance rule to said non-critical defects.

9. The system of claim 8, wherein the said final disposition of the mask is selected from accepting, repairing or scrapping the mask.

10. The method of claim 9, wherein the mask is used for a semiconductor manufacturing process.

11. A computer readable medium comprising codes for causing a computer to implement steps of a method for evaluating the effect of defects in masks, the method comprising the steps of:

identifying critical portions of a mask;

inspecting the mask for defects;

analyzing locations of the defects to classify said defects into critical defects and non-critical defects;

performing dimension measurements restrictedly on the critical portions and routing the masks with the critical portions for repair or scrapping to speed up the dimension measurements;

determining a final disposition of the mask by applying different acceptance rules to the critical defects and the non-critical and

incorporating feedback from the final disposition into a macro, which is applicable to other masks.

12. The method of claim 11, wherein the defects located within the critical portions are classified as the critical defects, and the defects located outside of the critical portions are classified as the non-critical defects.

13. The method of claim 12, the acceptance rules comprising a standard acceptance rule and a loose acceptance rule, wherein the standard acceptance rule is applied to said critical defects and the loose acceptance rule is applied to said non-critical defects.

14. The method of claim 13, wherein said final disposition of the mask is selected from accepting, repairing or scrapping the mask.

15. The method of claim 14, wherein the mask is a mask used for a semiconductor manufacturing process.

16. A method of evaluating the effect of defects on masks in a semiconductor manufacturing process, said method comprising:

inspecting a mask for defects using an inspection tool;

generating shapes representing the defects;

performing an analysis using design data, the generated shapes, and a pre-determined rule set to determine whether the defects are critical defects and non-critical defects,

performing dimension measurements restrictedly on critical portions of the mask and routing the masks with the critical portions for repair or scrapping to speed up the dimension measurements;

applying different acceptance rules to the critical defects and the non-critical defects to provide a final disposition of the mask; and

incorporating feedback from the final disposition into a macro, which is applicable to other masks.

17. The method of claim 16, wherein the applying different acceptance rules comprises:

applying a first acceptance rule to the defects located in critical portions of the mask; and

applying a second acceptance rule, that is looser than the first acceptance rule, to the defects located outside the critical portions of the mask.

18. The method of claim 16, further comprising:

storing defect inspection data from the inspection tool;

retrieving design data from a design data repository corresponding to the mask being inspected;

reading a first rule from a predetermined rule set of a plurality of rules; and

determining whether to repair, accept, or scrap the mask based upon the defect by applying the first rule to the generated shape.

19. The method of claim 18, wherein the first rule one of:

specifies the minimum acceptable distance between the defect and an other shape on a same design level of a mask; and

specifies the minimum acceptable distance between the defect and an other shape on a different design level of a mask.

20. The method of claim 18, further comprising:

reading a second rule from the predetermined rule set of a plurality of rules; and

determining whether to repair, accept, or scrap the mask based upon the defect by applying the second rule to the generated shape.

22. The method of claim 16, wherein the pre-determined rule sets include criteria for analyzing intra-level wafer problems and inter-level wafer problems, which are associated with a location, size and type of mask defect.

23. The method of claim 22, wherein the pre-determined rule sets include a plurality of:

a minimum feature size, a maximum feature size, a minimum space between shapes, a minimum space relative to a feature size, a mask inspection limit, and a mask defect.