Organic electroluminescent device including transparent conductive layer and fabricating method thereof

• US 7,494,396 B2
• Filed: 06/30/2005
• Issued: 02/24/2009
• Est. Priority Date: 03/15/2002
• Status: Expired due to Term

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Lee, Kwang-Yeon, Choi, Nack-Bong
• Primary Examiner(s): Williams; Joseph L
• Application Number:
  US11/170,145
• Publication Number:
  US 20050275340A1
• Time in Patent Office: 1,335 Days
• Field of Search: 445 49- 51, 313501-512
• US Class Current: 445/49
• CPC Class Codes: H10K 50/17 Carrier injection layers
• CPC Class Codes: H10K 50/81 Anodes

Abstract

A method of fabricating an electrode for an organic electroluminescent device includes forming a transparent conductive layer on a substrate, doping the transparent conductive layer with impurities, and annealing the doped transparent conductive layer.

Claims

1. A method of fabricating an electrode for an organic electroluminescent device, comprising steps of:

forming a transparent conductive layer on a substrate;

doping the transparent conductive layer with accelerated impurities; and

annealing the doped transparent conductive layer,

wherein the electrode is coupled to a hole injection layer,

wherein the transparent conductive layer includes at least one of indium-tin-oxide And indium-zinc-oxide, and

wherein the hole injection layer has a work function between about 5.2 eV and About 5.3 eV, and the transparent conductive layer has a work function of about 4.84 eV.

2. The method according to claim 1, wherein the transparent conductive layer is doped with impurities between about 5×

10¹⁴ ions/cm² and about 3×

10¹⁵ ions/cm² at an acceleration voltage of about 30 kV.

3. The method according to claim 1, wherein the step of annealing the doped transparent conductive layer includes annealing the doped transparent conductive layer at a temperature between about 230°

C. and about 400°

C. for a time period between about 30 minutes to about 2 hours.

4. The method according to claim 1, wherein the step of annealing the doped transparent conductive layer includes annealing the doped transparent conductive layer at a temperature of about 400°

C. for about 30 minutes.

5. The method according to claim 1, wherein the step of doping the transparent conductive layer includes doping the transparent conductive layer to a maximum concentration depth equal to about 30% of a thickness of the transparent conductive layer.

6. The method according to claim 1, wherein the impurities are positive type (p-type) impurities.

7. The method according to claim 6, wherein the impurities are compounds including boron impurities.

8. The method according to claim 1, wherein the impurities are negative type (n-type) impurities.

9. The method according to claim 8, wherein the impurities are compounds including phosphorus impurities.

10. A method of fabricating an organic electroluminescent device, comprising steps of:

forming a transparent conductive layer on a substrate;

doping the transparent conductive layer with accelerated impurities;

annealing the transparent conductive layer doped with the accelerated impurities to form a first electrode;

forming a plurality of organic electroluminescent layers to include a first organic electroluminescent layer and a second organic electroluminescent layer such that the first organic electroluminescent layer is coupled to the first electrode; and

forming a second electrode coupled to the second organic electroluminescent layer,

wherein the transparent conductive layer includes at least one of indium-tin-oxide and indium-zinc-oxide, and

wherein the first organic electroluminescent layer has a work function between about 5.2 eV and about 5.3 eV, and the transparent conductive layer has a work function of about 4,84 eV.

11. An electrode of an organic electroluminescent device produced by a process comprising:

forming a transparent conductive layer on a substrate;

doping the transparent conductive layer with accelerated impurities; and

annealing the doped transparent conductive layer,

wherein the electrode is coupled to a hole injection layer,

wherein the transparent conductive layer includes at least one of indium-tin-oxide and indium-zinc-oxide, and

wherein the hole injection layer has a work function between about 5.2 eV and about 5.3 eV, and the transparent conductive layer has a work function of about 4.84 eV.