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Manufacturing a semiconductive device using a controlled atomic layer removal process

  • US 7,494,882 B2
  • Filed: 03/10/2006
  • Issued: 02/24/2009
  • Est. Priority Date: 03/10/2006
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductive device, comprising:

  • forming a mask for a semiconductive device structure over a layer of a semiconductor substrate;

    partially etching said layer to form lateral and vertical surfaces; and

    removing thicknesses of one to seven atomic diameters of atoms that comprise said layer from said lateral surfaces and said vertical surfaces that are located under said mask to form a target dimension of a semiconductive device structure, each of said thicknesses being equal to about one to seven atomic diameters of atoms that comprise said layer.

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