Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices
First Claim
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1. A method for forming a high dielectric layer of a semiconductor device, comprising:
- forming an ozone oxide layer over a silicon substrate;
forming a high dielectric layer on said ozone oxide layer, wherein said high dielectric layer comprises at least one layer selected from the group consisting of a hafnium oxide layer, a zirconium oxide layer, and a Group 3 metal oxide layer;
nitriding said silicon substrate and said high dielectric layer on said silicon substrate;
and then oxidizing the silicon substrate and high dielectric layer.
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Abstract
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.
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Citations
23 Claims
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1. A method for forming a high dielectric layer of a semiconductor device, comprising:
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forming an ozone oxide layer over a silicon substrate; forming a high dielectric layer on said ozone oxide layer, wherein said high dielectric layer comprises at least one layer selected from the group consisting of a hafnium oxide layer, a zirconium oxide layer, and a Group 3 metal oxide layer; nitriding said silicon substrate and said high dielectric layer on said silicon substrate; and then oxidizing the silicon substrate and high dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for forming a high dielectric layer of a semiconductor device, comprising:
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forming an ozone oxide layer over a silicon substrate; forming a high dielectric layer on said ozone oxide layer, wherein said high dielectric layer comprises at least one layer selected from the group consisting of a hafnium oxide layer, a zirconium oxide layer, and a Group 3 metal oxide layer; nitriding said silicon substrate and said high dielectric layer on said silicon substrate; wherein the nitriding process is selected from the group consisting of a nitrogen plasma treatment process, a thermal treatment in a nitrogen atmosphere process, and a process comprising forming a nitrogen layer over the high dielectric layer and thermally treating the formed nitrogen layer and then oxidizing the silicon substrate and high dielectric layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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