Image sensor with stacked and bonded photo detection and peripheral circuit substrates

• US 7,495,206 B2
• Filed: 12/28/2005
• Issued: 02/24/2009
• Est. Priority Date: 12/30/2004
• Status: Active Grant

• Current Assignee: Intellectual Ventures II LLC (Intellectual Ventures LLC)
• Original Assignee: Magnachip Semiconductor Limited (Magnachip Semiconductor)
• Inventors: Park, Sang-Kyun
• Primary Examiner(s): Sohn; Seung C
• Application Number:
  US11/321,772
• Publication Number:
  US 20060146233A1
• Time in Patent Office: 1,154 Days
• Field of Search: 250/214.1, 257/292, 257/293, 438/67, 438/74, 438/668
• US Class Current: 250/214.1
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/1469 Assemblies, i.e. hybrid integration

Abstract

A complementary metal oxide semiconductor (CMOS) device with a three dimensional integration structure and a method for fabricating the same are provided. An image sensor includes a first substrate in which a photo detection device is formed; a second substrate in which a peripheral circuit is formed, wherein the first substrate and the second substrate are bonded through a plurality of bonding pads formed on both the first substrate and the second substrate, and a back side of the first substrate is turned upside down; and a microlens formed on a top portion of the back side of the first substrate.

Claims

1. An image sensor, comprising:

a photo detection device including a photodiode formed at a first end of said photo detection device, a first plurality of bonding pads formed on a second end of said photo detection device opposite said first end and a transfer transistor configured to transfer photoelectric charges produced by said photodiode, said transfer transistor having an electrode and being located between said photodiode and said first plurality of bonding pads such that said electrode of said transfer transistor being located below a plane defined by said photodiode; and

a peripheral circuits device including a second plurality of bonding pads formed on one end of said peripheral circuit device, said peripheral circuits device further including peripheral circuits formed on a substrate;

wherein said photo detection device is stacked on top of said peripheral circuits device such that ones of said first plurality of boding pads are electrically coupled to associated ones of said second plurality of bonding pads to provide electrical connection path between said photodiode and said peripheral circuits.

2. The image sensor of claim 1, wherein said peripheral circuits includes:

a plurality of transistors placed between said substrate and the second plurality of bonding pads;

one or more first connection units extending from the second plurality of bonding pads to at least one of said plurality of transistors;

an input/output pad disposed on an opposite end of said peripheral circuit device opposite from said end on which said second plurality bonding pads are disposed; and

at least one second connection unit extending through said substrate to form an electrical path between at least one of said second plurality of bonding pads and said input/output pad.

3. The image sensor of claim 2, wherein a diameter of each of the connection units ranges from approximately 1 μ

m to approximately 5 μ

m and a length of each of the connection units ranges from approximately 5 μ

m to approximately 50 μ

m.

4. The image sensor of claim 1, further comprising:

a microlens formed above said first end of said photo detection device;

a color filter array disposed between the photodiode and the microlens; and

an insulation layer formed with a silicon-on-insulation (SOI) structure, said insulation layer being disposed between said color filter array and said photodiode,

wherein one of impurity regions of the transfer transistors is directly connected to the photodiode.

5. The image sensor of claim 4, wherein:

the insulation layer is formed with an oxide based layer in a thickness ranging from approximately 0.3 μ

m to approximately 10 μ

m.

6. The image sensor of claim 1, wherein the first plurality and the second plurality of bonding pads are formed with copper (Cu).

7. The image sensor of claim 1, wherein the photodiode includes two different conductive regions whose PN junction is horizontally formed.

8. A method for fabricating an image sensor, comprising:

fabricating a photo detection device by;

forming a first insulation layer on a first substrate;

forming an epitaxial layer on the first insulation layer;

forming a photodiode within the epitaxial layer;

forming a transfer transistor within the epitaxial layer, an impurity region of the transfer transistor being directly connected to the photodiode; and

forming a plurality of first bonding pads above the transfer transistor;

fabricating a peripheral circuit device by;

forming a plurality of transistors on a second substrate;

forming a plurality of connection units extend from the second substrate away from said plurality of transistors, at least one of said plurality of connection units being made to penetrate through said second substrate; and

forming a plurality of second bonding pads at ends of the connection units;

stacking and bonding together the photo detection device and the peripheral device such that the first bonding pads and the second bonding pads face, and electrically coupled to, each other, and such that an electrode of said transfer transistor is located below a plane defined by said photodiode;

forming an input/output pad to be connected to the at least one of the plurality of connection units that penetrates said second substrate on a back side of the second substrate;

removing a back side of the first substrate to expose the first insulation layer;

forming a color filter array and an over coating layer on the first insulation layer; and

forming a microlens on the over coating layer.

9. The method of claim 8, wherein the first insulation layer is formed with an oxide based layer in a thickness ranging from approximately 0.3 μ

m to approximately 10 μ

m.

10. The method of claim 8, wherein the first bonding pads and the second bonding pads are formed with copper (Cu).

11. The method of claim 8, wherein a diameter of each of the connection units ranges from approximately 1 m to approximately 5 μ

m, and a length of each of the connection units ranges from approximately 5 μ

m to approximately 50 μ

m.

12. The method of claim 10, wherein the bonding of the photo detection device and the peripheral circuit device is performed at a temperature ranging from approximately 300°

C. to approximately 600°

C.

13. The method of claim 8, wherein the forming of the input/output pad includes:

removing a portion of a back side of the second substrate to expose the at least one of the plurality of connection units; and

forming the input/output pad in electrical connection with the exposed at least one of the plurality of connection units.

14. The method of claim 13, wherein during the removing of the portion of the back side of the second substrate, the second substrate remains in a thickness ranging from approximately 5 μ

m to approximately 50 μ

m.

15. The method of claim 13, wherein during the removing of the portion of the back side of the second substrate, one of a mechanical grinding process and a chemical mechanical polishing (CMP) process is used.

16. The method of claim 8, wherein the forming of the second bonding pads includes:

forming a second insulation layer over the connection units;

exposing the connection units by selectively etching the second insulation layer; and

forming the second bonding pads, wherein the second bonding pads are planarized with the second insulation layer and connected to the exposed connection units.

17. The method of claim 16, wherein the forming of the second bonding pads further includes recessing the second insulation layer to a thickness ranging from approximately 0.1 μ

m to approximately 1 μ

m after forming of the second insulation layer.

18. The method of claim 8, wherein the photodiode is formed with two different conductive regions whose PN junction is horizontally formed.