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Light emitting devices

  • US 7,495,260 B2
  • Filed: 09/14/2006
  • Issued: 02/24/2009
  • Est. Priority Date: 04/15/2003
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and

    a photonic crystal structure formed in at least a portion of the n-type region; and

    a reflector disposed on at least a portion of a surface of the p-type region opposite the active region.

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