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Gas-sensing semiconductor devices

  • US 7,495,300 B2
  • Filed: 03/30/2005
  • Issued: 02/24/2009
  • Est. Priority Date: 01/10/2005
  • Status: Active Grant
First Claim
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1. A smart sensor comprising a gas-sensing device monolithically integrated with an electronic circuit incorporating control elements for drive, control and transducing functions, wherein the sensor has been fabricated using CMOS, Bi-CMOS or SOI based technology and including a fabrication step in which a layer of tungsten is applied to form simultaneously both (i) a metallization layer for contacts and interconnects between the control elements in the electronic circuit and (ii) a heater of the gas-sensing device.

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