Gas-sensing semiconductor devices

• US 7,495,300 B2
• Filed: 03/30/2005
• Issued: 02/24/2009
• Est. Priority Date: 01/10/2005
• Status: Active Grant

• Current Assignee: ScioSense B.V. (Ams-Osram AG)
• Original Assignee: University of Warwick
• Inventors: Covington, James Anthony, Udrea, Florin, Gardner, Julian William
• Primary Examiner(s): Coleman; W. David
• Assistant Examiner(s): Kim; Su C
• Application Number:
  US11/092,654
• Publication Number:
  US 20060154401A1
• Time in Patent Office: 1,427 Days
• Field of Search: 438/53, 438/49, 438/22, 438/48, 257/252, 257/253, 257/401, 257/414
• US Class Current: 257/414
• CPC Class Codes: G01N 27/128 Microapparatus

Abstract

A gas-sensing semiconductor device is fabricated on a silicon substrate having a thin silicon oxide insulating layer in which a resistive heater made of a CMOS compatible high temperature metal is embedded. The high temperature metal is tungsten. The device includes at least one sensing area provided with a gas-sensitive layer separated from the heater by an insulating layer. As one of the final fabrication steps, the substrate is back-etched so as to form a thin membrane in the sensing area. Except for the back-etch and the gas-sensitive layer formation, that are carried out post-CMOS, all other layers, including the tungsten resistive heater, are made using a CMOS process employing tungsten metallisation. The device can be monolithically integrated with the drive, control and transducing circuitry using low cost CMOS processing. The heater, the insulating layer and other layers are made within the CMOS sequence and they do not require extra masks or processing.

Claims

1. A smart sensor comprising a gas-sensing device monolithically integrated with an electronic circuit incorporating control elements for drive, control and transducing functions, wherein the sensor has been fabricated using CMOS, Bi-CMOS or SOI based technology and including a fabrication step in which a layer of tungsten is applied to form simultaneously both (i) a metallization layer for contacts and interconnects between the control elements in the electronic circuit and (ii) a heater of the gas-sensing device.

2. The smart sensor according to claim 1, comprising a semiconductor substrate, wherein the gas-sensing device has at least one sensing area provided with a gas-sensitive layer to be heated by the heater to promote gas reaction with the gas-sensitive layer, and sensing means for providing an electrical output indicative of gas reaction with the gas-sensitive layer.

3. The smart sensor according to claim 1, wherein the sensing means incorporates laterally spaced electrodes in the vicinity of the gas-sensitive layer.

4. The smart sensor according to claim 2, wherein the gas-sensitive layer is provided around the periphery of an air gap extending through a membrane.

5. The smart sensor according to claim 2, wherein the gas-sensitive layer is of tin oxide.

6. The smart sensor according to claim 2, wherein said at least one sensing area incorporates temperature sensing means.

7. The smart sensor according to claim 2, wherein the material of the substrate has been removed in at least one sensing area to leave a membrane incorporating the sensing area.

8. The smart sensor according to claim 2, wherein the material of the substrate has been removed in at least one sensing area by back etching.

9. The smart sensor according to claim 2, wherein said at least sensing area is integrated with at least one electronic circuit area incorporating associated circuitry.

10. The smart sensor according to claim 2, wherein an insulating layer is provided on one side of the substrate.

11. The smart sensor according to claim 10, wherein the heater is embedded in the insulating layer.

12. The smart sensor according to claim 10, wherein the insulating layer is a silicon oxide layer.

13. The smart sensor according to claim 10, wherein a passivation layer is provided on the insulating layer on one side of the substrate.

14. The smart sensor according to claim 13, wherein a conductive polymer layer is provided which acts as the gas-sensitive layer.

15. The smart sensor according to claim 13, wherein the gas-sensitive layer is formed on the passivation layer.

16. The smart sensor according to claim 1, wherein the heater is a meander-shaped tungsten heater.

17. A smart sensor according to claim 1, comprising a semiconductor substrate, at least one sensing area provided with a gas-sensitive layer and a heater for heating the gas-sensitive layer to promote gas reaction with the gas-sensitive layer, and a sensor for providing an electrical output indicative of gas reaction with the gas-sensitive layer, wherein the heater has in the heater'"'"'s composition at least one layer of tungsten and comprises two or more heating layers powered.

18. The device according to claim 17, wherein the heating layers are offset laterally relative to one another.

19. The device according to claim 17, wherein the heating layers are interlaced relative to one another.

20. The smart sensor according to claim 1, wherein the heater incorporates a spreading plate.

21. The smart sensor according to claim 1, which has been produced utilising CMOS, Bi-CMOS or SOI CMOS processing steps, or Bi-CMOS processing steps followed by a post-CMOS back-etch.

22. The smart sensor according to claim 1, which is a resistive gas-sensing device.

23. The smart sensor according to claim 1, which is a calorimetric gas-sensing device.

24. The smart sensor according to claim 1, wherein the material of the substrate has been removed in at least one area to leave a membrane.

25. The smart sensor according to claim 24, wherein the removal of the material of the substrate to define the membrane has been carried out by deep reactive ion etching.

26. The smart sensor according to claim 24, wherein the removal of the material of the substrate has been carried out by anisotropic wet etching.

31. A method according to claim 8, wherein the gas-sensing device has at least one sensing area provided with a gas-sensitive layer to be heated by the heater to promote gas reaction with the gas-sensitive layer, and a sensing unit for providing an electrical output indicative of gas reaction with the gas-sensitive layer.

27. A gas-sensing semiconductor device comprising a semiconductor substrate, at least one sensing area provided with a gas-sensitive layer and a heater for heating the gas-sensitive layer to promote gas reaction with the gas-sensitive layer, and a sensor for providing an electrical output indicative of gas reaction with the gas-sensitive layer, wherein the heater has in the heater'"'"'s composition at least one layer of tungsten, and wherein the sensor incorporates laterally spaced tungsten electrodes in the vicinity of the gas-sensitive layer.

28. The device according to claim 27, wherein the gas-sensitive layer is located between the electrodes.

29. The device according to claim 27, wherein the electrodes incorporate two or more electrodes spaced vertically one above the other.

30. A method of fabricating a smart sensor, comprising a gas-sensing device monolithically integrated with an electronic circuit incorporating control elements for drive, control and transducing functions using CMOS, Bi-CMOS or SOI-based technology, wherein the method includes applying a layer of tungsten to form simultaneously both (i) a metallization layer for contacts and interconnects between the control elements in the electronic circuit and (ii) a heater of the gas-sensing device.

32. A method according to claim 30, which includes removing the material of the substrate in at least one area in a post-CMOS process to leave a membrane.

33. A method according to claim 32, wherein the removal of the material of the substrate is carried out by deep reactive ion etching.

34. A method according to claim 32, wherein the removal of the material of the substrate is carried out by anisotropic wet etching.